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TEMT3700

Description
Photo Transistor, 830nm, 0.05A I(C),
CategoryLED optoelectronic/LED    photoelectric   
File Size88KB,6 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

TEMT3700 Overview

Photo Transistor, 830nm, 0.05A I(C),

TEMT3700 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
Maximum dark power200 nA
JESD-609 codee0
Installation featuresSURFACE MOUNT
Maximum on-state current0.05 A
Maximum operating temperature100 °C
peak wavelength830 nm
Maximum power dissipation0.1 W
Maximum response time0.000006 s
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

TEMT3700 Preview

TEMT3700
Vishay Telefunken
Silicon NPN Phototransistor
Description
TEMT3700 is a high speed silicon NPN epitaxial
planar phototransistor in a miniature PL–CC–2 pack-
age for surface mounting on printed boards. Due to its
waterclear epoxy lens the device is sensitive to visible
and near infrared radiation.
Features
D
D
D
D
D
D
D
PL–CC–2 SMD package
Extra wide viewing angle
ϕ
=
±
60
°
Package notch = collector
Base terminal not connected
Fast response times
Suitable for visible and near infrared radiation
Matches with IR emitter TSMS3700
94 8553
Applications
Miniature switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T
T
amb
x
0.1, t
x
10
m
s
x
55
°
C
p
t
x
3s
Document Number 81555
Rev. 3, 10-Apr-01
www.vishay.com
1 (6)
TEMT3700
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
E
e
= 1 mW/cm
2
,
= 950 nm, V
CE
= 5 V
Symbol
V
(BR)CE
O
Min
70
Typ
Max
Unit
V
nA
pF
mA
deg
nm
nm
V
l
I
CEO
C
CEO
I
ca
0.25
1
3
0.5
±60
830
620...980
0.15
6
2
180
200
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
E
e
= 1 mW/cm
2
,
Voltage
= 950 nm, I
C
= 0.1 mA
Rise Time / Fall Time
V
S
= 5 V, I
C
= 1 mA,
= 950 nm, R
L
= 1 k
V
S
= 5 V, I
C
= 1 mA,
= 950 nm, R
L
= 100
Cut–Off Frequency
V
S
= 5 V, I
C
= 2 mA,
R
L
= 100
l
p
l
0.5
V
CEsat
t
r
/ t
f
t
r
/ t
f
f
c
ϕ
l
0.3
l
l
W
m
s
m
s
kHz
W
W
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
125
P
tot
– Total Power Dissipation ( mW )
100
I
CEO
– Collector Dark Current ( nA )
10
4
10
3
V
CE
=20V
10
2
75
R
thJA
50
25
0
0
20
40
60
80
100
10
1
10
0
20
94 8304
40
60
80
100
94 8308
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.com
2 (6)
Document Number 81555
Rev. 3, 10-Apr-01
TEMT3700
Vishay Telefunken
2.0
I
ca rel
– Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
C
CEO
– Collector Emitter Capacitance ( pF )
10
8
f=1MHz
V
CE
=5V
E
e
=1mW/cm
2
=950nm
l
6
4
2
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
20
40
60
80
100
94 8294
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs.
Ambient Temperature
t
on
/ t
off
– Turn on / Turn off Time ( s )
10
I
ca
– Collector Light Current ( mA )
TEMT 3704
1
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
8
V
CE
=5V
R
L
=100
=950nm
m
6
l
W
0.1
V
CE
=5V
4
t
off
t
on
0
0
2
4
6
8
10
12
14
0.01
l
=950nm
2
0.001
0.01
94 8316
0.1
1
10
94 8293
E
e
– Irradiance ( mW / cm
2
)
I
C
– Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance
10
I
ca
– Collector Light Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( )
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
400
l
=950nm
1
E
e
=1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1
0.1
1
10
100
l
600
94 8317
V
CE
– Collector Emitter Voltage ( V )
94 8348
l
– Wavelength ( nm )
800
1000
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81555
Rev. 3, 10-Apr-01
www.vishay.com
3 (6)
TEMT3700
Vishay Telefunken
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8318
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
95 11316
www.vishay.com
4 (6)
Document Number 81555
Rev. 3, 10-Apr-01
TEMT3700
Vishay Telefunken
Solderpad Design in mm
95 10966
Document Number 81555
Rev. 3, 10-Apr-01
www.vishay.com
5 (6)
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