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CIL2328AO

Description
Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size96KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

CIL2328AO Overview

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN

CIL2328AO Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeTO-237
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-237AA
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max2 V

CIL2328AO Related Products

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Description Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN
Is it Rohs certified? conform to incompatible incompatible incompatible incompatible incompatible incompatible conform to incompatible incompatible
Parts packaging code TO-237 TO-237 TO-237 TO-237 TO-237 TO-237AA TO-237AA TO-237 TO-237 TO-237
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 TO-237, 3 PIN CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compli compli compli compli compli compli compliant compliant compliant
Maximum collector current (IC) 1.5 A 1.5 A 1 A 1 A 0.5 A 0.1 A 0.1 A 1.5 A 0.05 A 0.7 A
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 20 20 20 40 40 40 100 70 40
JEDEC-95 code TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE WIRE WIRE WIRE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 50 MHz 50 MHz 50 MHz 30 MHz 50 MHz 50 MHz 120 MHz 120 MHz 50 MHz
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - - EAR99 EAR99 EAR99
Collector-emitter maximum voltage 30 V 60 V 80 V 100 V 300 V - - 30 V 150 V 60 V
Maximum power dissipation(Abs) 1 W 2 W 2 W 2 W 2 W 2 W 2 W 1 W - -
VCEsat-Max 2 V 0.35 V 0.35 V 0.35 V - - - 2 V 0.5 V 0.7 V
JESD-609 code - e0 e0 e0 e0 e0 e0 - e0 e0
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - - -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches - 1 1 1 1 1 1 1 - -
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