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PDMB800E6

Description
Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size311KB,4 Pages
ManufacturerKyocera
Download Datasheet Parametric View All

PDMB800E6 Overview

Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel, MODULE-7

PDMB800E6 Parametric

Parameter NameAttribute value
MakerKyocera
package instructionFLANGE MOUNT, R-XUFM-X7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)800 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)400 ns
Nominal on time (ton)300 ns

PDMB800E6 Preview

IGBT
Module
800 A/600V
□ 回 路 図
CIRCUIT
外 ½ 寸 法 図
140
130
110
PDMB800E6
OUTLINE DRAWING
10
13.8 11.5
4 - Ø6.5
36
43.8
(C2E1)
1
(E2)
2
(C1)
3
3-M8
7
6
1
2
3
5
4
5(E1)
4(G1)
65
4-M4
LABEL
4
24
35
14.5
40
110
130
14.5
7(G2)
6(E2)
20.5
10
Dimension:[mm½
□ 最 大 定 格
MAXIMUM RATINGS
(at T
C
=25°C unless otherwise specified)
I½½½
S½½½½½
R½½½½ V½½½½
U½½½
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲート・エミッタ間電圧
G ate-E mitter V oltage
コ レ ク タ 電 流
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature
Isolation
Range
AC,1½inute)
DC
1½½
CES
GES
CP
½
½½½
ISO
600
±20
800
1,600
2,770
-40½+150
-40½+125
2,500
3(30.6)
(RMS)
N・½
(kgf½cm)
圧 (Terminal to Base
Voltage
締 め 付 け ト ル ク
M ounting Torque
電 気 的 特 性
Module Base to Heatsink
Busbar to Main Terminal
½½½
M4
M8
1.4(14.3)
10.5( 1 0 7 )
ELECTRICAL CHARACTERISTICS
(at T
j
=25°C unless otherwise specified)
C½½½½½½½½½½½½½
S½½½½½
T½½½ C½½½½½½½½
M½½.
T½½.
M½½.
U½½½
Collector-Emitter Cut-Off Current
G ate-E mitter L eakage C urrent
コ レ ク タ ・ エ ミ ッ タ 間 ½ 和 電 圧
Collector-Emitter Saturation Voltage
し き い 値 電 圧
G ate-E mitter T hreshold V oltage
Input Capacitance
上 昇
スイッチング時間
S witching T ime
時 間
Rise
Time
ターンオン時間
下 降 時 間
ターンオフ時間
Turn-on Time
Fall
Time
Turn-off Time
CES
GES
CE(sat)
GE(th)
½½½
½
½
½
½½
½
½
½
½½½
CE
= 600V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 800A,V
GE
= 15V
CE
= 5V,I
= 800mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
=
=
=
GE
=
300V
0.375Ω
1.5Ω
±15V
4.0
2.1
40,000
0.15
0.25
0.10
0.40
1.0
1.0
2.6
8.0
0.30
0.40
0.35
0.80
½A
μA
½F
μ½
フリーホイーリングダイオードの 特 性:
FREE WHEELING DIODE RATINGS(at
T
C
=25°C)
I½½½
S½½½½½
& CHARACTERISTICS(at
T
j
=25°C)
U½½½
R½½½½ V½½½½
F orward
C urrent
C½½½½½½½½½½½½½
DC
1½½
FM
S½½½½½
T½½½ C½½½½½½½½
800
1,600
M½½.
T½½.
M½½.
U½½½
Peak Forward Voltage
Reverse Recovery Time
□ 熱
特 性
½
½½
= 800A,V
GE
= 0V
= 800A,V
GE
= -10V
½i/½t= 1600A/μs
1.9
0.15
2.4
0.25
μ½
THERMAL CHARACTERISTICS
C½½½½½½½½½½½½½
S½½½½½
T½½½ C½½½½½½½½
M½½.
T½½.
M½½.
U½½½
T hermal I mpedance
IGBT
D iode
Rth(j-c)
Junction to Case
(Tcチップ直下での測定点)
0.045
0.110
℃/W
Fig.1-
Output Characteristics (Typical)
1600
Fig.2-
Output Characteristics (Typical)
Tj=25°C
1600
Tj=125°C
V
GE
=20V
12V
V
GE
=20V
1400
1200
1000
800
600
12V
1400
15V
11V
15V
11V
Collector Current I
C
(A)
Collector Current I
C
(A)
1200
1000
800
600
10V
10V
9V
400
9V
400
200
0
8V
8V
200
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Fig.3-
Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
Fig.4-
Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Tj=25°C
16
14
12
10
8
6
4
2
0
Tj=125°C
I
C
=400A
800A
1600A
I
C
=400A
Collector to Emitter Voltage V
CE
(V)
800A
12
10
8
6
4
2
0
Collector to Emitter Voltage V
CE
(V)
14
1600A
0
4
8
12
16
20
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.5-
Gate Charge vs. Collector to Emitter Voltage (Typical)
400
350
16
Fig.6-
Capacitance vs. Collector to Emitter Voltage (Typical)
300000
R
L
=0.375
Tj=25°C
14
100000
Collector to Emitter Voltage V
CE
(V)
V
GE
=0V
f=1MH
Z
Tj=25°C
Gate to Emitter Voltage V
GE
(V)
300
250
200
150
100
50
0
12
10
Capacitance C (pF)
Cies
30000
V
CE
=300V
200V
100V
8
6
4
2
0
3500
Coes
10000
Cres
3000
0
500
1000
1500
2000
2500
3000
1000
0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage V
CE
(V)
Fig.7-
Collector Current vs. Switching Time (Typical)
1
10
Fig.8-
Series Gate Impedance vs. Switching Time (Typical)
V
CC
=300V
I
C
=800A
V
GE
=±15V
Tj=25°C
Resistive Load
0.8
t
OFF
V
CC
=300V
R
G
=1.5
V
GE
=±15V
Tj=25°C
Resistive Load
5
2
Switching Time t (µs)
Switching Time t (µs)
0.6
1
0.5
t
f
0.4
toff
ton
0.2
tr
(V
CE
)
0.1
tf
0.2
t
ON
t
r(V
CE
)
0.05
0
0
200
400
600
800
1000
1200
0.02
1
1.5
3
10
30
Collector Current I
C
(A)
Series Gate Impedance R
G
(
)
Fig.9-
Collector Current vs. Switching Time
10
10
Fig.10-
Series Gate Impedance vs. Switching Time
V
CC
=300V
I
C
=800A
V
GE
=±15V
Tj=125°C
Inductive Load
1
t
OFF
t
ON
V
CC
=300V
R
G
=1.5
V
GE
=±15V
Tj=125°C
Inductive Load
5
2
Switching Time t (µs)
Switching Time t (µs)
1
0.5
0.1
t
f
t
r(Ic)
toff
tr
(I
C
)
ton
tf
0.2
0.1
0.05
0.01
0.001
0
200
400
600
800
1000
1200
0.02
1
1.5
3
10
30
Collector Current I
C
(A)
Series Gate Impedance R
G
(
)
Fig.11-
Collector Current vs. Switching Loss
80
3000
Fig.12-
Series Gate Impedance vs. Switching Loss
V
CC
=300V
I
C
=800A
V
GE
=±15V
Tj=125°C
Inductive Load
Switching Loss E
SW
(mJ/Pulse)
60
Switching Loss E
SW
(mJ/Pulse)
V
CC
=300V
R
G
=1.5
V
GE
=±15V
Tj=125°C
Inductive Load
E
OFF
1000
E
ON
300
E
ON
40
100
E
OFF
E
RR
20
30
E
RR
10
3
0
1
0
200
400
600
800
1000
1200
1
1.5
3
10
30
Collector Current I
C
(A)
Series Gate Impedance R
G
(
)
1600
1400
1200
1000
800
600
400
200
0
Fig.13-
Forward Characteristics of Free Wheeling Diode
(Typical)
Tj=25°C
Tj=125°C
Fig.14-
Reverse Recovery Characteristics (Typical)
1000
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr (ns)
I
F
=800A
Tj=25°C
Tj=125°C
500
Forward Current I
F
(A)
trr
200
I
RrM
100
0
1
2
3
4
50
0
800
1600
2400
3200
4000
4800
Forward Voltage
V
F
(V)
-di/dt (A/µs)
Fig.15-
Reverse Bias Safe Operating Area
5000
R
G
=1.5
2000
1000
500
, V
GE
=±15V, Tj<125°C
Collector Current I
C
(A)
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Fig.16-
Transient Thermal Impedance
1
Transient Thermal Impedance Rth
(J-C)
(°C/W)
3x10
-1
FRD
1x10
-1
IGBT
3x10
-2
1x10
-2
3x10
-3
1x10
-3
T
C
=25°C
1 Shot Pulse
3x10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
Time t (s)
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