3.5V 0.8W RF Power Amplifier IC for WCDMA
ITT2208GL
Vcc1 Vcc1 Vcc1
ADVANCED
INFORMATION
GND
Vc0
FEATURES
•
•
•
•
•
•
Single Bias
Class AB Operation
Small Profile 20-pin Micro Leadframe Plastic Package
29 dBm Linear Power Output
27 dB Power Gain
35% Power Added Efficiency
20
1
2
3
4
5
GND
6
7
RFin
GND
19
18
17
Vcc2/RFout
8
9
Control
Control
10
Vcc2/RFout
Vcc2/RFout
GND
GENERAL DESCRIPTION
This amplifier is a high power, high efficiency linear amplifier IC
targeting 3V handheld systems. The device is manufactured with
GaAs Heterojunction Bipolar Transistors (HBTs) and is intended to
be the final amplification stage in hand-held digital equipment and
spread spectrum systems. The power amplifier is packaged in a
20pin 4mm x 4mm MLP (Micro Leadframe™ Package).
Vctrl1
16
15
14
13
Vctrl2
12
11
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
Rating
DC Supply Voltage
DC Control Bias Voltage
RF Input Power
Junction Temperature
Storage Temperature Range
Symbol
V
CC
V
CTRL
P
IN
T
J
T
STG
Value
8
3
10
150
-40 to +150
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
CC
= 3.5 V, T
A
= 25 °C, 50
Ω
System, output externally matched
Characteristic
Frequency Range
Load Power
(P
IN
=+2 dBm, V
CTRL
set for max P
OUT
)
Load Power
(P
IN
=+2 dBm, V
CC
=2.9V, T
A
=90
o
C)
Power Added Efficiency
(P
OUT
=29 dBm set by V
CTRL
with P
IN
=+2 dBm)
Control Voltage Range
(All operating conditions)
Control Current
(All operating conditions)
Backoff Collector Current
(P
OUT
=10dBm, P
IN
controlled, Vctrl=TBD)
Off State Supply Current
(V
CTRL
= 0.2V)
Adjacent Channel Power
(5 MHz from carrier, BW=4.096 MHz, P
OUT
= -46 to +29 dBm)
Adjacent Channel Power
(10 MHz from carrier, BW=4.096 MHz, P
OUT
= -46 to +29 dBm)
Input VSWR
(P
OUT
= -46 to +29 dBm, P
IN
controlled)
, 50
Ω
Ref.
Harmonics
(P
OUT
=29 dBm, P
IN
=+2 dBm)
Noise Power in Rx Band
(2110-2170MHz)
Off-state Isolation
(V
CC
=0.0V
,
P
IN
=+2 dBm)
Rise and Fall Time
Advanced Information - Specifications Subject to Change Without Notice
Symbol
—
P
OUT
P
OUT
PAE
V
CTRL
I
CTRL
I
CC
I
CC
ACP
ACP
—
No(Rx)
—
Min
1920
28
26.5
30
0.2
——
——
Typ
——
29
28
35
——
—
-45
-53
1.5:1
-40
-139
5
——
——
Max
1980
—
—
—
2.7
5.0
100
30
-40
-51
2:1
-35
-35
Unit
MHz
dBm
dBm
%
V
mA
mA
µA
dBc
dBc
—
dBc
dBm/Hz
dB
µs
902571 --, July 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
1
3.5V 0.8W RF Power Amplifier IC for WCDMA
ITT2208GL
ADVANCED
INFORMATION
Advanced Information - Specifications Subject to Change Without Notice
902571 --, July 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
2
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