Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 250 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| BC328-C | BC328-B | BC327-C | BC328-A | BC327-A | BC327-B | |
|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN |
| Parts packaging code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A |
| Collector-emitter maximum voltage | 25 V | 25 V | 45 V | 25 V | 45 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 250 | 160 | 250 | 100 | 100 | 160 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| Maker | SAMSUNG | - | - | SAMSUNG | SAMSUNG | SAMSUNG |
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