IRLR010 datasheet, PDF - EEWORLD Datasheet

IRLR010: DescriptionPower Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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IRLR010 Overview

Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	6.7 A
Maximum drain current (ID)	6.7 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	27 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	90 ns
Maximum opening time (tons)	70 ns

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