Advance
K1S1616B1M
Document Title
1Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
Draft Date
October 17, 2002
Remark
Advanced
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.0
October 2002
Advance
K1S1616B1M
1M x 16 bit Uni-Transistor CMOS RAM
FEATURES
•
•
•
•
•
•
UtRAM
GENERAL DESCRIPTION
The K1S1616B1M is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports Industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports dual chip selection for user interface.
Process Technology: CMOS
Organization: 1M x16 bit
Power Supply Voltage: 1.7V~2.2V
Three State Outputs
Compatible with Low Power SRAM
Dual Chip selection support
•
Package Type: 48-TBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temp.
Vcc Range
Speed
Standby
(I
SB1
, Max.)
60µA
Operating
(I
CC2
, Max.)
25mA
PKG Type
K1S1616B1M-I
Industrial(-40~85°C)
1.7V~2.2V
70/85ns
48-TBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
CS2
Vcc
Vss
B
I/O9
UB
A3
A4
CS1
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
DNU
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
DNU
CS1
CS2
OE
WE
UB
LB
48-TBGA: Top View(Ball Down)
Control Logic
Name
Function
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
Do Not Use
1)
CS1,CS2 Chip Select Inputs
OE
WE
A
0
~A
19
Output Enable Input
Write Enable Input
Address Inputs
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use.
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.0
October 2002
Advance
K1S1616B1M
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K1S1616B1M-EI70
K1S1616B1M-EI85
Function
48-TBGA-6.00x7.00, 70ns
48-TBGA-6.00x7.00, 85ns
UtRAM
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 200µs with CS1=high.or CS2=low.
3. Issue read operation at least twice.
FUNCTIONAL DESCRIPTION
CS1
H
X
1)
X
1)
L
L
L
L
L
L
L
L
CS2
X
1)
L
X
1)
H
H
H
H
H
H
H
H
OE
X
1)
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 2.5V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
-3-
Revision 0.0
October 2002
Advance
K1S1616B1M
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
UtRAM
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.7V
0
1.4
-0.2
3)
Typ
1.8V
0
-
-
Max
2.2V
0
V
CC
+0.2
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
Cycle time=1µs, 100% duty, I
IO
=0mA, CS1≤0.2V, LB≤0.2V
or/and UB≤0.2V, CS2
≥
V
CC
-
0.2V, V
IN
≤0.2V
or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty, CS1=V
IL,
CS2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
I
OL
= 0.1mA
I
OH
= -0.1mA
Other inputs=0~Vcc
1) CS1≥V
CC
-0.2V
,
CS2
≥
V
CC
-
0.2V(CS1 controlled) or
2) 0V
≤
CS2
≤
0.2V(CS2 controlled)
Min
-1
-1
-
-
-
1.4
-
Typ
-
-
-
-
-
-
-
Max Unit
1
1
5
25
0.2
-
60
µA
µA
mA
mA
V
V
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(CMOS)
V
OL
V
OH
I
SB1
-4-
Revision 0.0
October 2002
Advance
K1S1616B1M
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage: 0.5 x V
CC
Output load (See right): C
L
=50pF
C
L
1. Including scope and jig capacitance
UtRAM
Dout
AC CHARACTERISTICS
(Vcc=1.7~2.2V, T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Read
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
BLZ
t
OLZ
t
HZ
t
BHZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
10
5
0
0
0
5
70
60
0
60
60
55
1)
0
0
30
0
5
70ns
Max
-
70
70
35
70
-
-
-
25
25
25
-
-
-
-
-
-
-
-
25
-
-
-
Min
85
-
-
-
-
10
10
5
0
0
0
5
85
70
0
70
70
60
1)
0
0
35
0
5
85ns
Max
-
85
85
40
85
-
-
-
25
25
25
-
-
-
-
-
-
-
-
25
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. t
WP
(min)=70ns for continuous write operation over 50 times.(Only in case of WE controlled write operation)
-5-
Revision 0.0
October 2002
京公网安备 11010802033920号
EEWORLD
