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IS0-1715ARH-Q

Description
3A BUF OR INV BASED MOSFET DRIVER, UUC16, 0.129 X 0.174 INCH, 0.190 INCH HEIGHT, DIE-16
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size319KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Related ProductsFound1parts with similar functions to IS0-1715ARH-Q
Download Datasheet Parametric Compare View All

IS0-1715ARH-Q Overview

3A BUF OR INV BASED MOSFET DRIVER, UUC16, 0.129 X 0.174 INCH, 0.190 INCH HEIGHT, DIE-16

IS0-1715ARH-Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionDIE,
Contacts16
Reach Compliance Codecompli
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-XUUC-N16
JESD-609 codee3
Number of functions1
Number of terminals16
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Nominal output peak current3 A
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum supply voltage18 V
Minimum supply voltage10 V
surface mountYES
Temperature levelMILITARY
Terminal surfaceMATTE TIN
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
total dose300k Rad(Si) V
Base Number Matches1
Datasheet
IS-1715ARH, IS-1715AEH
Radiation Hardened Complementary Switch FET Drivers
The radiation hardened
IS-1715ARH
and
IS-1715AEH
are high speed, high current,
complementary power FET drivers designed for use
in synchronous rectification circuits. Soft switching
transitions for the two output waveforms can be
managed by setting the independently programmable
delays. Alternatively, the delay pins can be configured
for zero-voltage sensing to allow for precise switching
control.
The IS-1715ARH and IS-1715AEH have a single
input, which is PWM and TTL compatible, and can run
at frequencies up to 1MHz. The AUX output switches
immediately at the rising edge of the INPUT, but waits
for the T2 delay before responding to the falling edge.
A logic low on the enable pin (ENBL) places both
outputs into an active-low mode, and an Undervoltage
Lockout (UVLO) function is set at 9V (maximum).
These devices are constructed with the dielectrically
isolated Rad Hard Silicon Gate (RSG) process and
are immune to Single Event Latch-Up (SEL). They
have been specifically designed to provide highly
reliable performance in harsh radiation environments.
Features
• Electrically screened to SMD #5962-00521
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
Gamma dose 3x10
5
rad(Si)
Latch-up immune
• PWR output current (source and sink): 3A (peak)
• AUX output current (source and sink): 3A (peak)
• Low operating supply current: 6mA (max)
• Wide programmable delay range: 100ns to 600ns
• Configurable for zero-voltage switching
• Switching frequency to 1MHz
• Both outputs active-low in Sleep mode
• 9V (maximum) UVLO
Related Literature
For a full list of related documents, visit our website:
IS-1715ARH, IS-1715AEH
device pages
Applications
• Synchronous rectification in power supplies
VCC
600
VCC = 10V
VCC
PWM
IS-1715
INPUT
VCC
T1
T2
ENBL
PWR
AUX
GND
100
R
T
1
GND
R
T
2
0
0
10
20
30
40
125 °C
T2
50
R
T
(kΩ)
25 °C
T2
60
70
-55 °C
T2
80
90
100
Delay (ns)
500
400
300
200
T1
T1
T1
125 °C
25 °C
-55 °C
PWM
Controller
GND
Figure 1. IS-1715 Typical Application Diagram
Figure 2. T1 Delay, T2 Delay vs R
T
vs Temperature
FN4875 Rev.4.00
Jul.22.20
Page 1 of 11

IS0-1715ARH-Q Related Products

IS0-1715ARH-Q TG12H1581BB IS9-1715ARH-8 IS0-1715AEH-Q
Description 3A BUF OR INV BASED MOSFET DRIVER, UUC16, 0.129 X 0.174 INCH, 0.190 INCH HEIGHT, DIE-16 Fixed Resistor, Thin Film, 0.5W, 1580ohm, 150V, 0.1% +/-Tol, 50ppm/Cel, Surface Mount, 2512, CHIP 3A BUF OR INV BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16 Buffer/Inverter Based MOSFET Driver
Is it Rohs certified? conform to conform to conform to conform to
package instruction DIE, CHIP, ROHS COMPLIANT DFP, DIE OR CHIP ,
Reach Compliance Code compli unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Is it lead-free? Lead free Lead free Lead free -
Interface integrated circuit type BUFFER OR INVERTER BASED MOSFET DRIVER - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-609 code e3 e3 e4 -
Number of terminals 16 2 16 -
Maximum operating temperature 125 °C 155 °C 125 °C -
Minimum operating temperature -55 °C -55 °C -55 °C -
Package shape RECTANGULAR RECTANGULAR PACKAGE RECTANGULAR -
Package form UNCASED CHIP SMT FLATPACK -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT APPLICABLE NOT SPECIFIED
surface mount YES YES YES -
Terminal surface MATTE TIN Tin (Sn) - with Nickel (Ni) barrier Gold (Au) -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT APPLICABLE NOT SPECIFIED

IS0-1715ARH-Q Similar Products

Part Number Manufacturer Description
5962F0052101V9A Renesas(瑞萨电子) BUF OR INV BASED MOSFET DRIVER, UUC16, 0.129 X 0.174 INCH, 0.190 INCH HEIGHT, DIE-16

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