USBQNM50403Ce3 – USBQNM50424Ce3
Available
500 W, Non-Magnetic Low Capacitance
Bidirectional TVS array
DESCRIPTION
HALOGEN
FREE
This Transient Voltage Suppressor (TVS) is assembled in a non-magnetic QFN-143 package
with a leadframe 100% free of iron. It has the same pinout and footprint as the SOT-143
package and is aimed at applications in MRI machines and other magnetic environments
where the use of ferrous metals is not acceptable. The configuration gives protection to 1 bi-
directional data or interface line. It is designed for use in applications where low capacitance
protection is required at the board level from voltage transients caused by electrostatic
discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-
4-4 and the secondary effects of lightning. These TVS arrays have a peak power rating of 500
watts for an 8/20 μs pulse (figure 1). With a capacitance of only 3 pF, this part can provide
protection to very fast data lines including USB at 900 Mbits/sec.
QFN-143
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
Protects 1 bidirectional line
Surge protection per IEC 61000-4-2 and IEC 61000-4-4
Ultra low capacitance
Low profile surface mount package
RoHS compliant versions are available
Also available:
Unidirectional
(QFN-143)
USBQNM50403e3 –
USBQNM50424e3
APPLICATIONS / BENEFITS
•
•
•
•
EIA RS485 data rates: 5 Mbps
10 Base-T Ethernet
USB data rate 900 Mbps
Non-magnetic for MRI applications
MAXIMUM RATINGS
@ 25 ºC unless otherwise noted
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Peak Pulse Power Dissipation with a 10/1000μs waveform
(with a duty factor of 0.01%)
Solder Temperature @ 10 s
Symbol
T
STG
T
J
P
PP
Value
-55 to +150
-55 to +125
500
260
Unit
o
C
o
C
W
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 1 of 5
USBQNM50403Ce3 – USBQNM50424Ce3
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: RoHS compliant annealed matte-tin plating over EFTEC64T non-magnetic copper alloy. Readily solderable per
MIL-STD-750, method 2026.
MARKING: Body marked with part number code (NxxC).
POLARITY: Dot in corner indicates pin 1.
TAPE-AND-REEL: Standard per EIA-481-B (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 16.53 milligrams
See
Package Dimensions
on last page.
PART NOMENCLATURE
USB Q NM 5 04
USB Suitable
QFN-143 Package
Non-Magnetic
500 W P
PP
Rating
03 C e3
RoHS Compliance
Bidirectional Designator
Rated Standoff Voltage (V
WM
)
(see
Electrical Characteristics
table)
4 Pin Package
Symbol
α
V(BR)
I
(BR)
I
D
I
PP
V
(BR)
V
C
V
WM
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Current: The current used for measuring breakdown voltage V
(BR)
.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
STAND-
OFF
VOLTAGE
V
WM
Volts
MAX
BREAKDOWN
VOLTAGE
V
(BR)
@ 1 mA
Volts
MIN
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
Volts
MAX
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
Volts
MAX
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
CAPACITANCE
(f= 1 MHz)
C
@0V
pF
MAX
TEMPERATURE
COEFFICIENT
OF V
(BR)
α
V(BR)
mV/°C
MAX
PART
NUMBER
DEVICE
MARKING
USBQNM50403Ce3
USBQNM50405Ce3
USBQNM50412Ce3
USBQNM50415Ce3
USBQNM50424Ce3
N03C
N05C
N12C
N15C
N24C
3.3
5.0
12.0
15.0
24.0
4.0
6.0
13.3
16.7
26.7
8.0
10.8
19.0
24.0
43.0
11
12
26
32
57
200
40
1
1
1
3
3
3
3
3
-5
1
8
11
28
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 2 of 5
USBQNM50403Ce3 – USBQNM50424Ce3
GRAPHS
P
PP
– Peak Pulse Power - kW
tp – Pulse Time –
µs
FIGURE 1
Peak Pulse Power vs. Pulse Time
I
PP
Peak Pulse Current - % I
PP
time –
µs
FIGURE 2
Pulse Waveform
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 3 of 5
USBQNM50403Ce3 – USBQNM50424Ce3
PACKAGE DIMENSIONS
Ref.
A
B
C
D
E
F
G
H
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.112
0.116
2.85
2.95
0.096
0.100
2.45
2.55
0.0354 0.0366
0.900
0.930
0.020
0.024
0.50
0.60
0.031 NOM
0.80 NOM
0.069 NOM
1.75 NOM
0.018 NOM
0.45 NOM
0.076 NOM
1.92 NOM
PAD LAYOUT
Ref.
A1
A2
A3
B1
B2
C
D
E
F
G
Dimensions
Inch
Millimeters
Nominal
Nominal
0.112
2.85
0.079
2.00
0.071
1.80
0.108
2.75
0.075
1.90
0.041
1.05
0.033
0.85
0.032
0.80
0.033
0.85
0.047
1.20
See schematic on next page
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 4 of 5
USBQNM50403Ce3 – USBQNM50424Ce3
SCHEMATIC
Seen from above
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 5 of 5
Microcontroller MCU
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