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BDS21SMD-JQR-A

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size452KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BDS21SMD-JQR-A Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

BDS21SMD-JQR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionHERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-276AB
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21SMD
High DC Current Gain
Hermetic Ceramic Surface Mount Package
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
-80V
-80V
-5V
-5A
-0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
5
Units
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8218
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com
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