FBI15J1M1 datasheet, PDF - EEWORLD Datasheet

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FBI15J1M1: DescriptionBridge Rectifier Diode, 1 Phase, 3.2A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor diode; File Size24KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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FBI15J1M1 Overview

Bridge Rectifier Diode, 1 Phase, 3.2A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI15J1M1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fagor Electrónica
package instruction	PLASTIC PACKAGE-4
Contacts	4
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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FBI15A1M1.......FBI15M1M1

15 Amp. Glass Passivated Bridge Rectifier

Dimensions in mm.

3.2

3.5

Plastic

Case

Voltage

50 to 1000 V.

Current

15 A.

+ 0.05

• Glass Passivated Junction Chips.

7.5

suffix

–4

0.7

•

UL recognized under component index file

•

number E130180.

Lead and polarity identifications.

Case: Molded Plastic.

Ideal for printed circuit board (P.C.B.).

High surge current capability.

The plastic material carries U/L recognition 94 V-O.

17.5

• Mounting Instructions

•

High temperature soldering guaranteed: 260 ºC – 10 sc.

•

Recommended mounting torque: 8 Kg.cm.

Maximum Ratings, according to IEC publication No. 134

FBI15A

1M1

FBI15B

1M1

FBI15D

1M1

FBI15G

1M1

FBI15J

1M1

FBI15K

1M1

FBI15M

1M1

RRM

RMS

F(AV)

FSM

DIS

stg

Peak recurrent reverse voltage (V)

Maximum RMS voltage (V)

Max. Average forward current with heatsink

without heatsink

10 ms. peak forward surge current

(Jedec Method)

Current squared time (rating for fusing)

(1ms.<t<10ms. Tc = 25ºC)

Dielectric strength (terminals to case, AC 1 min.)

Operating temperature range

Storage temperature range

100

200

140

400

280

600

420

800

560

1000

700

15.0 A at 75 ºC

3.2 A at 25 ºC

200 A

110 A sec

2500 V

– 55 to + 150 °C

– 55 to +150 ºC

Electrical Characteristics at Tamb = 25°C

th (j-c)

th (j-a)

Max. forward voltage drop per diode at I

= 7.5 A

Max. instantaneous reverse current at V

RRM

MAXIMUM THERMAL RESISTANCE

Junction-Case. With Heatsink.

Junction-Ambient. Without Heatsink.

1.10 V

5 A

2.2 ºC/W

22 ºC/W

Jan - 00

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