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Datasheet> All Categories > Analog mixed-signal IC> Amplifier circuit> SA5211D-T
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SA5211D-T

Description
Operational Amplifier, 1 Func, 130000uV Offset-Max, BIPolar, PDSO14
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size303KB，28 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

SA5211D-T Overview

Operational Amplifier, 1 Func, 130000uV Offset-Max, BIPolar, PDSO14

SA5211D-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureCURRENT-FEEDBACK
Maximum bias current (IIB) at 25C30 µA
frequency compensationYES
Maximum input offset voltage130000 µV
JESD-30 codeR-PDSO-G14
JESD-609 codee4
low-dissonanceNO
Number of functions1
Number of terminals14
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP14,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
method of packingTAPE AND REEL
power supply5 V
Certification statusNot Qualified
Maximum slew rate31 mA
Supply voltage upper limit6 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBIPOLAR
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
broadbandYES

SA5211D-T Preview

SA5211
Transimpedance amplifier (180 MHz)
Rev. 03 — 07 October 1998
Product specification
1. Description
The SA5211 is a 28 kΩ transimpedance, wide-band, low noise amplifier with
differential outputs, particularly suitable for signal recovery in fiber optic receivers.
The part is ideally suited for many other RF applications as a general purpose gain
block.
2. Features
s
s
s
s
s
s
s
Extremely low noise: 1.8 pA /
√Hz
Single 5 V supply
Large bandwidth: 180 MHz
Differential outputs
Low input/output impedances
High power supply rejection ratio
28 kΩ differential transresistance
3. Applications
c
c
s
s
s
s
s
s
s
s
Fiber optic receivers, analog and digital
Current-to-voltage converters
Wide-band gain block
Medical and scientific Instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
4. Pinning information
4.1 Pinning
D Package
GND
2
GND
2
NC
I
IN
NC
V
CC1
V
CC2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OUT (–)
GND
2
OUT (+)
GND
1
GND
1
GND
1
GND
1
TOP VIEW
SD00318
Fig 1. Pin configuration.
5. Ordering information
Table 1:
Ordering information
Package
Name
SA5211D
SO14
Description
plastic small outline package; 14 leads; body width 3.9 mm
Version
Temperature
range (°C)
Type number
SOT108-1
−40
to +85
6. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
T
amb
T
J
T
STG
P
D MAX
I
IN MAX
θ
JA
[1]
[2]
Parameter
power supply
operating ambient
temperature range
operating junction
temperature range
storage temperature range
power dissipation, T
A
= 25
°C
(still-air)
[1]
maximum input current
[2]
thermal resistance
Conditions
Min
−
-40
-55
-65
−
−
−
Max
6
+85
+150
+150
1.0
5
125
Unit
V
°C
°C
°C
W
mA
°C/W
Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
θ
JA
= 125
°C/W
The use of a pull-up resistor to V
CC
, for the PIN diode is recommended.
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 03 — 07 October 1998
2 of 28
Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
Recommended operating conditions
Parameter
supply voltage
ambient temperature range
junction temperature range
Conditions
Min
4.5
-40
-40
Max
5.5
+85
+105
Unit
V
°C
°C
Table 3:
Symbol
V
CC
T
amb
T
J
7. Static characteristics
Table 4: DC electrical characteristics
Min and Max limits apply over operating temperature range at V
CC
= 5 V, unless otherwise specified. Typical data apply at
V
CC
= 5 V and T
amb
= 25
°
C.
Symbol
V
IN
V
O±
V
OS
I
CC
I
OMAX
I
IN
I
IN MAX
Parameter
input bias voltage
output bias voltage
output offset voltage
supply current
output sink/source current
[1]
input current
(2% linearity)
maximum input current
overload threshold
Test Circuit 8,
Procedure 2
Test Circuit 8,
Procedure 4
Test conditions
Min
0.55
2.7
−
20
3
±20
±30
Typ
0.8
3.4
0
26
4
±40
±60
Max
1.00
3.7
130
31
−
−
−
Unit
V
V
mV
mA
mA
µA
µA
[1]
Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.
8. Dynamic characteristics
Table 5: AC electrical characteristics
Typical data and Min and Max limits apply at V
CC
= 5 V and T
amb
= 25
°
C
Symbol
R
T
R
O
R
T
R
O
f
3dB
R
IN
C
IN
∆R/∆V
∆R/∆T
I
N
Parameter
transresistance (differential output)
output resistance (differential output)
transresistance (single-ended output)
output resistance (single-ended output)
bandwidth (-3dB)
input resistance
input capacitance
transresistance power supply sensitivity
transresistance ambient temperature sensitivity
RMS noise current spectral density (referred to
input)
integrated RMS noise current over the
bandwidth (referred to input)
V
CC
= 5±0.5 V
∆T
amb
= T
amb MAX
-T
amb MIN
Test Circuit 2
f = 10 MHz
TA = 25
°C
TA = 25
°C
Test Circuit 2
Test conditions
DC tested RL =
∞
Test Circuit 8, Procedure 1
DC tested
DC tested
RL =
∞
DC tested
T
A
= 25°C
Test circuit 1
Min
21
−
10.5
−
−
−
−
−
−
−
Typ
28
30
14
15
180
200
4
3.7
1.8
Max
36
−
18.0
−
−
−
−
−
−
Unit
kΩ
Ω
kΩ
Ω
MHz
Ω
pF
%/V
%/°C
pA/√Hz
0.025
−
I
T
−
−
−
−
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 03 — 07 October 1998
3 of 28
Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
Table 5: AC electrical characteristics
…continued
Typical data and Min and Max limits apply at V
CC
= 5 V and T
amb
= 25
°
C
Symbol
I
n
Parameter
C
S
= 0
[1]
Test conditions
∆f
= 50 MHz
∆f
= 100 MHz
∆f
= 200 MHz
∆f
= 50 MHz
∆f
= 100 MHz
∆f
= 200 MHz
DC tested,
∆V
CC
= 0.1V
Equivalent AC
Test Circuit 3
DC tested,
∆V
CC
= 0.1V
Equivalent AC
Test Circuit 4
DC tested,
∆V
CC
= 0.1V
Equivalent AC
Test Circuit 5
f = 0.1 MHz
Test Circuit 6
RL =
∞
Test Circuit 8, Procedure 3
Test Circuit 7
Test Circuit 7
Min
−
−
−
−
−
−
23
Typ
13
20
35
13
21
41
32
Max
−
−
−
−
−
−
−
Unit
nA
I
n
C
S
= 1pF
nA
PSRR
power supply rejection ratio
[2]
(V
CC1
= V
CC2
)
power supply rejection ratio
[2]
(V
CC1
)
dB
PSRR
23
32
−
dB
PSRR
power supply rejection ratio
[2]
(V
CC2
)
45
65
−
dB
PSRR
V
OMAX
V
IN MAX
t
R
[1]
[2]
[3]
[4]
power supply rejection ratio (ECL
configuration)
[2]
maximum differential output voltage swing
maximum input amplitude for output duty cycle
of 50±5%
[3]
rise time for 50mV output signal
[4]
−
1.7
160
−
23
3.2
−
0.8
−
−
−
1.8
dB
V
P-P
mV
P-P
ns
Package parasitic capacitance amounts to about 0.2pF
PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V
CC
lines.
Guaranteed by linearity and overload tests.
t
R
defined as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 03 — 07 October 1998
4 of 28
Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
9. Test circuits
SINGLE-ENDED
NETWORK ANALYZER
R
T
≈
V
OUT
R = 2
×
S21
×
R
V
IN
DIFFERENTIAL
V
OUT
R = 4
×
S21
×
R
V
IN
R
T
=
S-PARAMETER TEST SET
PORT 1
5V
V
CC1
V
CC2
33
0.1µF
Z
O
= 50
PORT 2
R
O
≈
Z
O
1 – S22
– 33
1 + S22
R
O
= 2Z
O
1 – S22
– 66
1 + S22
0.1µF
Z
O
= 50
OUT
R = 1k
IN
DUT
33
OUT
50
GND
1
GND
2
0.1µF
R
L
= 50
Test Circuit 1
SPECTRUM ANALYZER
5V
V
CC1
V
CC2
33
A
V
= 60DB
0.1µF
Z
O
= 50
OUT
NC
IN
DUT
33
OUT
0.1µF
R
L
= 50
GND
1
GND
2
Test Circuit 2
SD00319
Fig 2.
Test circuits 1 and 2.
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 03 — 07 October 1998
5 of 28
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