TLP161J
TOSHIBA Photocoupler
GaAs IRED & Photo-Triac
TLP161J
Triac Drive
Programmable Controllers
AC-Output Module
Solid State Relay
The TOSHIBA mini flat coupler TLP161J is a small outline coupler,
suitable for surface mount assembly.
The TLP161J consists of a photo triac, optically coupled to a gallium
arsenide infrared emitting diode.
•
•
•
•
•
•
Zero-voltage crossing turn-on
Peak off-state voltage: 600 V (min)
Trigger LED current: 10 mA (max)
On-state current: 70 mA (max)
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1577, file No. E67349
JEDEC
JEITA
1
6
Unit: mm
Pin Configurations
⎯
⎯
11-4C3
TOSHIBA
1: Anode
3: Cathode
4: Terminal 1
6: Terminal 2
Weight: 0.09 g (typ.)
3
ZC
4
Trigger LED Current
Trigger LED Current (mA)
Classification (*)
V
T
=
6 V, Ta
=
25°C
Min
(IFT7)
Standard
⎯
⎯
Max
7
10
T7
T7, Blank
Marking of
Classification
*:
Ex. (IFT7): TLP161J (IFT7)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP161J (IFT7): TLP161J
1
2010-10-01
TLP161J
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Forward current
Forward current derating
(Ta
≥
53°C)
LED
Peak forward current
(100
μs
pulse, 100 pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state RMS
current
Ta
=
25°C
Ta
=
70°C
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
T
j
V
DRM
I
T(RMS)
ΔI
T
/°C
I
TP
I
TSM
T
j
T
stg
T
opr
T
sol
BV
S
Rating
50
−0.7
1
5
125
600
70
40
−0.67
2
1.2
115
−55
to 125
−40
to 100
260
2500
Unit
mA
mA/°C
A
V
°C
V
mA
mA/°C
A
A
°C
°C
°C
°C
Vrms
Detector
On-state current derating
(Ta
≥
25°C)
Peak on-state current
(100
μs
pulse, 120 pps)
Peak nonrepetitive surge current
(PW
=
10 ms)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H.
≤
60%)
(Note)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristics
Supply voltage
Forward current
Peak on-state current
Operating temperature
Symbol
V
AC
I
F
I
TP
T
opr
Min
⎯
15
⎯
−25
Typ.
⎯
20
⎯
⎯
Max
240
25
1
85
Unit
Vac
mA
A
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2010-10-01
TLP161J
Individual Electrical Characteristics
(Ta
=
25°C)
Characteristics
Forward voltage
LED
Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Detector
Holding current
Critical rate of rise of
off-state voltage
Critical rate of rise of
commutating voltage
Symbol
V
F
I
R
C
T
I
DRM
V
TM
I
H
dv/dt
dv/dt(c)
I
F
=
10 mA
V
R
=
5 V
V
=
0, f
=
1 MHz
V
DRM
=
600 V
I
TM
=
70 mA
⎯
V
in
=
240 Vrms, Ta
=
85°C (Figure 1)
V
in
=
60 Vrms, I
T
=
15 mA (Figure 1)
Test Condition
Min
1.0
⎯
⎯
⎯
⎯
⎯
200
⎯
Typ.
1.15
⎯
30
10
1.7
0.6
500
0.2
Max
1.3
10
⎯
1000
2.8
⎯
⎯
⎯
Unit
V
μA
pF
nA
V
mA
V/μs
V/μs
Coupled Electrical Characteristics
(Ta
=
25°C)
Characteristics
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Symbol
I
FT
V
IH
I
IH
C
S
R
S
V
T
=
6 V
I
F
=
Rated I
FT
I
F
=
Rated I
FT
, V
T
=
Rated V
DRM
V
S
=
0, f
=
1 MHz
V
S
=
500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 1 minute, in oil
Test Condition
Min
⎯
⎯
⎯
⎯
1
×
12
10
2500
⎯
⎯
Typ.
5
⎯
200
0.8
10
14
Max
10
50
600
⎯
⎯
⎯
⎯
⎯
Unit
mA
V
μA
pF
Ω
Vrms
Vdc
⎯
5000
5000
+
V
CC
−
R
in
120
Ω
1
6
V
in
5 V, V
CC
0V
3
4
R
L
4 kΩ
dv/dt(c)
dv/dt
Figure 1 dv/dt Test Circuit
3
2010-10-01
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