Synchronous DRAM Module, 8MX64, 6ns, CMOS
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | , |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N144 |
| memory density | 536870912 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 144 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8MX64 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
京公网安备 11010802033920号
EEWORLD
