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K4E640812E-TP60T

Description
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32,
Categorystorage    storage   
File Size194KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4E640812E-TP60T Overview

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32,

K4E640812E-TP60T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSOP, TSOP32,.46
Reach Compliance Codecompliant
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width8
Number of terminals32
word count8388608 words
character code8000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.001 A
Maximum slew rate0.1 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Industrial Temperature
K4E660812E,K4E640812E
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Nor-
mal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using
Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E660812E-JI/P(3.3V, 8K Ref.)
- K4E640812E-JI/P(3.3V, 4K Ref.)
- K4E660812E-TI/P(3.3V, 8K Ref.)
- K4E640812E-TI/P(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
Active Power Dissipation
Unit : mW
Speed
-45
-50
-60
Refresh Cycles
Part
NO.
K4E660812E*
K4E640812E
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
L-ver
128ms
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V
±0.3V
power supply
Industrial Temperature operating
( -40~85°C)
4K
432
396
360
8K
324
288
252
FUNCTIONAL BLOCK DIAGRAM
Refresh Control
Refresh Counter
Memory Array
8,388,608 x 8
Cells
Sens e Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS -before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
¡Ü
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ7
Data out
Buffer
Performance Range:
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
74ns
84ns
104ns
t
HPC
17ns
20ns
25ns
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
OE
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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