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5962F9861301VCX

Description
QUAD COMPARATOR, 2000uV OFFSET-MAX, CDIP14, CERAMIC, DIP-14
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size42KB,2 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

5962F9861301VCX Overview

QUAD COMPARATOR, 2000uV OFFSET-MAX, CDIP14, CERAMIC, DIP-14

5962F9861301VCX Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionDIP,
Contacts14
Reach Compliance Codecompliant
ECCN codeEAR99
Amplifier typeCOMPARATOR
Maximum average bias current (IIB)0.1 µA
Maximum input offset voltage2000 µV
JESD-30 codeR-CDIP-T14
JESD-609 codee4
Number of functions4
Number of terminals14
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Supply voltage upper limit36 V
Nominal supply voltage (Vsup)5 V
surface mountNO
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
total dose300k Rad(Si) V

5962F9861301VCX Preview

HS-139RH
Data Sheet
May 1999
File Number
3573.2
Radiation Hardened Quad Voltage
Comparator
The Radiation Hardened HS-139RH consists of four
independent single or dual supply voltage comparators on a
single monolithic substrate. The common mode input voltage
range includes ground, even when operated from a single
supply, and the low supply current makes these comparators
suitable for low power applications. These types were
designed to directly interface with TTL and CMOS.
The HS-139RH is fabricated on our dielectrically isolated
Rad Hard Silicon Gate (RSG) process, which provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-139RH are
contained in SMD 5962-98613. A “hot-link” is provided
on our homepage with instructions for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU LET Threshold . . . . . . . . . . . . . . . 20MeV/cm
2
/mg
- Low Dose Rate Effects Immunity
• 100V Output Voltage Withstand Capability
• ESD Protection to >3000V
• Differential Input Voltage Range Equal to the Supply
Voltage
• Input Offset Voltage (V
IO
). . . . . . . . . . . . . . . . . 2mV (Max)
• Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA (Max)
Applications
• Pulse Generators
• Timing Circuitry
• Level Shifting
• Analog to Digital Conversion
Ordering Information
ORDERING
NUMBER
5962F9861301VCC
5962F9861301QCC
HS1-139RH/Proto
5962F9861301VXC
5962F9861301QXC
HS9-139RH/Proto
INTERNAL
MKT. NUMBER
HS1-139RH-Q
HS1-139RH-8
HS1-139RH/Proto
HS9-139RH-Q
HS9-139RH-8
HS9-139RH/Proto
TEMP. RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Pinouts
s
HS-139RH (SBDIP CDIP2-T14)
TOP VIEW
OUT 2 1
OUT 1 2
V+ 3
- IN 1 4
+ IN 1 5
- IN 2 6
+ IN 2 7
14 OUT 3
13 OUT 4
12 GND
11 + IN 4
10 - IN 4
9 + IN 3
8 - IN 3
HS-139RH (FLATPACK CDFP3-F14)
TOP VIEW
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
- IN 2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HS-139RH
Die Characteristics
DIE DIMENSIONS:
3750µm x 2820µm (148 mils x 111 mils)
483µm
±
25.4µm (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Silox (SiO
2
)
Thickness: 8.0kÅ
±
1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ
±
2kÅ
Substrate:
Radiation Hardened Silicon Gate, Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
49
Metallization Mask Layout
HS-139RH
GND
(12)
+IN4
(11)
-IN4
(10)
OUT4
(13)
+IN3
(9)
OUT3
(14)
-IN3
(8)
+IN2
(7)
OUT2
(1)
-IN2
(6)
OUT1
(2)
V+
(3)
-IN1
(4)
+IN1
(5)
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
2

5962F9861301VCX Related Products

5962F9861301VCX 5962F9861301VXX
Description QUAD COMPARATOR, 2000uV OFFSET-MAX, CDIP14, CERAMIC, DIP-14 QUAD COMPARATOR, 2000uV OFFSET-MAX, CDFP14, CERAMIC, FP-14
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code DIP DFP
package instruction DIP, DFP,
Contacts 14 14
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Amplifier type COMPARATOR COMPARATOR
Maximum average bias current (IIB) 0.1 µA 0.1 µA
Maximum input offset voltage 2000 µV 2000 µV
JESD-30 code R-CDIP-T14 R-CDFP-F14
JESD-609 code e4 e4
Number of functions 4 4
Number of terminals 14 14
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DFP
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE FLATPACK
Certification status Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class V
Supply voltage upper limit 36 V 36 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO YES
Temperature level MILITARY MILITARY
Terminal surface GOLD GOLD
Terminal form THROUGH-HOLE FLAT
Terminal location DUAL DUAL
total dose 300k Rad(Si) V 300k Rad(Si) V

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