KRC422V datasheet, PDF - EEWORLD Datasheet

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KRC422V: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VSM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size67KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC422V Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VSM, 3 PIN

KRC422V Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	62
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

KRC416V~KRC422V

EPITAXIAL PLANAR NPN TRANSISTOR

E

FEATURES

With Built-in Bias Resistors.

Simplify Circuit Design.

A

G

1

B

H

3

EQUIVALENT CIRCUIT

OUT

R1

R2

K

P

TYPE NO.

KRC416V

R1(k )

1

2.2

4.7

10

47

100

R2(k

10

2.2

10

4.7

10

100

)

C

J

IN

KRC417V

KRC418V

KRC419V

COMMON

1. EMITTER

2. BASE

3. COLLECTOR

KRC420V

KRC421V

KRC422V

VSM

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRC416V~422V

KRC416V

KRC417V

KRC418V

V

O

RATING

50

10, -5

12, -10

12,-5

V

I

20, -7

30, -10

40, -15

40, -10

I

O

KRC416V~422V

P

D

T

j

T

stg

100

150

-55 150

mA

mW

V

UNIT

V

CHARACTERISTIC

Input Voltage

KRC419V

KRC420V

KRC421V

KRC422V

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

MARK SPEC

TYPE

MARK

KRC416V KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V

N2

N4

N5

N6

N7

N8

N9

Marking

D

Reduce a Quantity of Parts and Manufacturing Process.

2

DIM MILLIMETERS

_

A

1.2 +0.05

_

B

0.8 +0.05

_

C

0.5 + 0.05

_

D

0.3 + 0.05

_

E

1.2 + 0.05

_

0.8 + 0.05

G

0.40

H

_

0.12 + 0.05

J

_

K

0.2 + 0.05

P

5

Type Name

2001. 7. 24

Revision No : 0

1/2

KRC422V Related Products

	KRC422V	KRC418V	KRC421V
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VSM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VSM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VSM, 3 PIN
Maker	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.54	BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	62	33	33
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz

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