KSP55/56
AMPLIFIER TRANSISTOR
•
Collector-Emitter Voltage: V
CEO
=KSP55: 60V
KSP56: 80V
•
Collector Dissipation: P
C
(max) =625mW
PNP EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
: KSP55
: KSP56
Emitter-Base Voltage
: KSP55
: KSP56
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
-60
-80
V
CEO
V
CEO
I
C
P
C
T
J
T
STG
-60
-80
-4
-500
625
150
-55~150
V
V
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
Rating
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Emitter Breakdown Voltage
: KSP55
: KSP56
Collector-Base Breakdown Voltage
Collector Cut-off Current
: KSP55
: KSP56
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol
BV
CEO
Test Conditions
I
C
= -1mA, I
B
=0
-60
-80
-4
-0.1
-0.1
-0.1
50
50
-0.25
-1.2
50
V
V
µA
µA
µA
Min
Max
Unit
BV
EBO
I
CBO
I
E
= -100µA, I
C
=0
V
CB
= -60V, I
E
=0
V
CB
= -80V, I
E
=0
V
CE
= -60V, I
B
=0
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -100mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -2V, I
C
= -10mA
f=100MHz
I
CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
V
V
MHz
Rev. B
©
1999 Fairchild Semiconductor Corporation
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Formative or
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This datasheet contains the design specifications for
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