KSA992
KSA992
Audio Frequency Low Noise Amplifier
• Complement to KSC1845
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-120
-120
-5
-50
-10
500
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
f
T
C
ob
NV
Parameter
Collector Cut-off Current
Collector Cur-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Voltage
Test Condition
V
CB
= -120V, I
E
=0
V
CE
= -100V, I
B
=0
V
EB
= -5mA, I
C
=0
V
CE
= -6V, I
C
= -0.1mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -6V, I
C
= -1mA
V
CB
= -30V, I
E
=0, f=1MHz
50
150
200
-0.55
500
500
-0.61
-0.09
100
2
25
3
40
Min.
Typ.
Max.
-50
-1
-50
800
-0.65
-0.3
V
V
MHz
pF
mV
Units
nA
µA
nA
h
FE2
Classification
Classification
h
FE2
P
200 ~ 400
F
300 ~ 600
E
400 ~ 800
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA992
Typical Characteristics
-1.0
I
B
= -1.2
µ
A
I
B
= -1.2
µ
A
I
B
= -1.0
µ
A
I
B
= -0.8
µ
A
-10
I
B
= -24
µ
A
-0.8
I
C
[mA], COLLECTOR CURRENT
I
B
= -20
µ
A
I
B
= -16
µ
A
I
C
[mA], COLLECTOR CURRENT
-8
-0.6
-6
I
B
= -0.6
µ
A
-0.4
I
B
= -12
µ
A
-4
I
B
= -8
µ
A
I
B
= -0.4
µ
A
-0.2
I
B
= -0.2
µ
A
I
B
= 0
-2
I
B
= -4
µ
A
0.0
0
-20
-40
-60
-80
-100
0
0
-1
-2
I
B
= 0
-3
-4
-5
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
V
CE
(sat), V
BE
(sat)[V], SATURATION VOLTAGE
-10
V
CE
= -6V
800
I
C
= 10 - I
B
h
FE
, DC CURRENT GAIN
-1
V
BE
(sat)
600
400
-0.1
V
CE
(sat)
200
0
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10
1000
I
E
=0
f = 1MHz
V
CE
= -6V
C
ob
[pF], CAPACITANCE
100
1
10
0.1
-1
-10
-100
-1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
E
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
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E
2
CMOS™
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®
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DISCLAIMER
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®
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SyncFET™
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UHC™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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