ZXMN2A02X8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.02
DESCRIPTION
I
D
= 7.8A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
MSOP8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A02X8TA
ZXMN2A02X8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
PINOUT
DEVICE MARKING
•
ZXMN
2A02
Top View
ISSUE 2 - JANUARY 2005
1
ZXMN2A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
20
20
7.8
6.3
6.2
39
3.1
39
1.1
8.8
1.67
13.4
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
74.5
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.
ISSUE 2 - JANUARY 2005
2
ZXMN2A02X8
CHARACTERISTICS
1.2
I
D
Drain Current (A)
10
Limited
1
R
DS(on)
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
100m
10m
100m
V
DS
Drain-Source Voltage (V)
1
10
Temperature (°C)
Safe Operating Area
120
110
T
amb
=25°C
100
90
80
70
D=0.5
60
50
40
30
D=0.2
20
10
0
100µ 1m 10m 100m
Derating Curve
Thermal Resistance (°C/W)
MaximumPower (W)
100
Single Pulse
T
amb
=25°C
Single Pulse
D=0.05
D=0.1
10
1
10
100
1k
1
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JANUARY 2005
3
ZXMN2A02X8
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
0.7
0.02
0.04
27
20
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
= 12V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=4.5V, I
D
=11A
V
GS
=2.5V, I
D
=8.4A
V
DS
=10V,I
D
=11A
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
0.85
16.3
7.8
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
7.9
10
33.3
13.6
18.6
5.2
4.9
C
iss
C
oss
C
rss
1900
356
218
g
fs
pF
pF
pF
V
DS
=10 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=11A
V
DD
=10V, I
D
=1A
R
G
=6.0Ω, V
GS
=4.5V
0.95
V
ns
nC
T
J
=25°C, I
S
=11.5A,
V
GS
=0V
T
J
=25°C, I
F
=2.1A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JANUARY 2005
4
ZXMN2A02X8
TYPICAL CHARACTERISTICS
T = 25°C
7V
T = 150°C
2.5V
7V
2.5V
2V
1.5V
I
D
Drain Current (A)
10
2V
V
GS
1
1.5V
I
D
Drain Current (A)
10
1
V
GS
1V
0.1
0.1
0.1
0.1
1
10
V
DS
Drain-Source Voltage (V)
1
10
V
DS
Drain-Source Voltage (V)
Output Characteristics
1.6
Normalised R
DS(on)
and V
GS(th)
Output Characteristics
V
GS
= 4.5V
I
D
= 11A
R
DS(on)
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
I
D
Drain Current (A)
T = 150°C
T = 25°C
1
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
V
DS
= 10V
0.1
1
2
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
1.5V
T = 25°C
V
GS
Normalised Curves v Temperature
I
SD
Reverse Drain Current (A)
10
1
0.1
0.01
1
10
T = 150°C
10
2V
T = 25°C
2.5V
4V
7V
1
0.1
0.2
On-Resistance v Drain Current
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.6
0.8
1.0
1.2
ISSUE 2 - JANUARY 2005
5
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