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KSC1394RD26Z

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSC1394RD26Z Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92

KSC1394RD26Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)700 MHz
KSC1394
KSC1394
TV VHF Tuner Mixer
• High Current Gain Bandwidth Product : f
T
=700MHz
• High Power Gain : G
PE
=20dB (MIN.) at f=200MHz
• Low Noise Figure : NF=3.5dB (MAX.) at f=200MHz
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
30
30
4
20
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
C
RE
G
PE
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
Noise Figure
Test Condition
I
C
=10µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=2mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=3mA
V
CB
=10V, I
E
=0, f=1MHz,
V
CE
=6V, I
C
=3mA
f=200MHz
V
CE
=6V, I
C
=3mA
R
S
=50Ω,f=200MHz
20
3.5
400
700
0.35
0.5
40
Min.
30
30
4
0.1
180
0.7
V
MHz
pF
dB
dB
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
60 ~ 140
Y
90 ~ 180
©2000 Fairchild Semiconductor International
Rev. A, February 2000

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