KSC2335
KSC2335
High Speed, High Voltage Switching
•
Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1
TO-220
2.Collector
3.Emitter
1.Base
Value
500
400
7
7
15
3.5
1.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE
1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 3A, I
B1
= 0.6A, L = 1mH
I
C
= 3A, I
B1
= -I
B2
= 0.6A
V
BE
(off) = -5V, L = 180µH, Clamped
I
C
= 6A,I
B1
= 2A, I
B2
= -0.6A
V
BE
(off) = -5V, L = 180µH, Clamped
V
CB
= 400V, I
E
= 0
V
CE
= 400V, R
BE
= 51Ω @ T
C
=125°C
V
CE
= 400V, V
BE
(off)= -1.5V
V
CE
= 400V, V
BE
(off)= -1.5V @
T
C
=125°C
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CC
=150V, I
C
= 3A
I
B1
= -I
B2
= 0.6A
R
L
= 50Ω
20
20
10
Min.
400
450
400
10
1
10
1
10
80
80
1
1.2
1
2.5
1
V
V
µs
µs
µs
Max.
Units
V
V
V
µA
mA
µA
mA
µA
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Classification
h
FE2
©2000 Fairchild Semiconductor International
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
Rev. A, February 2000
KSC2335
Typical Characteristics
I
B
=0.45A
I
B
=0.50A
I
B
=0.40A
I
B
=0.35A
I
B
=0.30A
I
B
=0.25A
I
B
=0.20A
3
1000
5
V
CE
= 5 V
Pulsed
I
C
[mA], COLLECTOR CURRENT
4
h
FE
, DC CURRENT GAIN
100
I
B
=0.15A
I
B
=0.10A
2
10
I
B
=0.05A
1
0
0
1
2
3
4
5
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(SAT) [V], V
BE
(SAT) [V], SATURATION VOLTAGE
10
160
I
C
= 5 I
B
Pulsed
140
120
1
V
BE
(SAT)
dT [%], I
C
DERATING
100
80
S/b Limited
60
0.1
40
V
CE
(SAT)
20
Dissipation Limited
0.01
0.01
0
0.1
1
10
0
50
o
100
150
200
V
CB
[V], COLLECTOR-BASE VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Derating Curve of Safe Operating Areas
10
100
Single Pulse
PW = 10 us
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
8
10
50 us
1
6
Dissipation Limoted
0.1 ms
0.3 ms
4
0.1
S/b Limited
1 ms
100 ms
V
CEO
(SUS)
2
V
CEX
(SUS)
0.01
10 ms
0
0
100
200
300
400
500
1E-3
1
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Forward Bias Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2335
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
MCU
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