KSC2517
KSC2517
High Speed Switching Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
I
B
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Base Current
Junction Temperature
Storage Temperature
Parameter
1
TO-220
2.Collector
3.Emitter
1.Base
Value
150
100
12
5
10
1.5
30
2.5
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
A
°C
°C
* Pw≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
I
C
= 3A, I
B1
= 0.3A, L = 1mH
I
C
= 3A, I
B1
= -I
B2
= 0.3A
V
BE
(off) = -5V, L = 180µH, Clamped
I
C
=6A, I
B1
= 1.2A, I
B2
= -0.3A,
V
BE
(off) = -5V, L = 180µH, Clamped
V
CB
= 100V, I
E
= 0
V
CE
= 100V,R
BE
= 51Ω@ T
C
= 125°C
V
CE
= 100V, V
BE
(off) = -1.5V
V
CE
= 100V, V
BE
(off) = -1.5V @
T
C
= 125°C
V
EB
= 10V, I
C
= 0
V
CE
= 5V, I
C
= 0.2A
V
CE
= 5V, I
C
= 2A
I
C
= 3A, I
B
= 0.3A
I
C
= 3A, I
B
= 0.3A
V
CC
= 50V, I
C
= 3A
I
B1
= -I
B2
= 0.3A
R
L
= 17Ω
40
40
Min.
100
150
100
10
1
10
1
10
200
0.6
1.5
0.5
2.5
0.5
V
V
µs
µs
µs
Max.
Units
V
V
V
µA
mA
µA
mA
µA
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classification
Classification
h
FE2
R
40 ~ 80
O
60 ~ 120
Y
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2517
Typical Characteristics
5
I
B
0mA
I
B
=80mA
mA
I
B
=9
100
=
1000
I
C
[A], COLLECTOR CURRENT
4
mA
I
B
=70
mA
I
B
=60
I
B
=50mA
V
CE
= 5V
I
B
=40mA
3
h
FE
, DC CURRENT GAIN
5
100
I
B
=30mA
2
I
B
=20mA
10
1
I
B
=10mA
0
0
1
2
3
4
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
100
I
C
=10I
B
I
C
[A], COLLECTOR CURRENT
10
1
V
BE
(sat)
30
10
us
0u
s
30
0u
s
Di
n
tio
ipa
ss e d
it
m
Li
s
s
1m
10m
1
V
CE
(sat)
0.1
s
ed
0m mit
10 Li
b
S/
0.1
0.01
0.01
0.01
0.1
1
10
1
10
100
1000
10000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
8
7
160
140
120
I
C
[A], COLLECTOR CURRENT
6
5
4
3
2
1
0
0
50
100
150
200
dT[%], I
C
DERATION
100
80
60
40
20
0
0
20
40
60
o
S/b
DI
SS
IP
AT
I
LIM
ITE
D
V
CEO
(SUS)
V
CEX
(SUS)
O
N
LI
M
UT
ED
80
100
120
140
160
180
200
V
CE
(s), COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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