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K7N803209B-QC25

Description
ZBT SRAM, 256KX32, 2.6ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Categorystorage    storage   
File Size536KB,24 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7N803209B-QC25 Overview

ZBT SRAM, 256KX32, 2.6ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

K7N803209B-QC25 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time2.6 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density8388608 bit
Memory IC TypeZBT SRAM
memory width32
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.06 A
Minimum standby current3.14 V
Maximum slew rate0.47 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
K7N803609B
K7N803209B
K7N801809B
Document Title
256Kx36/x32 & 512Kx18 Pipelined NtRAM
TM
256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
1.0
History
1. Initial document.
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change I
SB2
form 50mA to 60mA
Draft Date
May. 18. 2001
Aug. 11. 2001
Aug. 28. 2001
Nov. 16. 2001
Remark
Preliminary
Preliminary
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov 2001
Rev 1.0
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