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MT45W2MV16BBB-608WT

Description
Pseudo Static RAM, 2MX16, 60ns, CMOS, PBGA54, LEAD FREE, VFBGA-54
Categorystorage    storage   
File Size814KB,53 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT45W2MV16BBB-608WT Overview

Pseudo Static RAM, 2MX16, 60ns, CMOS, PBGA54, LEAD FREE, VFBGA-54

MT45W2MV16BBB-608WT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts54
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time60 ns
JESD-30 codeR-PBGA-B54
JESD-609 codee1
length8 mm
memory density33554432 bit
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals54
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width6 mm
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAM
TM
Features
Single device supports asynchronous, page, and burst
operations
V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V—contact factory)
2.70V–3.30V V
CC
Q (Option L—contact factory)
Random Access Time: 70ns
Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz ( CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 6.5ns @ 104 MHz
t
MT45W4MW16BFB MT45W2MW16BFB
Figure 1: Ball Assignment
54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ: (39ns [4 clocks]
@ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 120µA (64Mb), 110µA (32MB)—standard
100µA (64Mb), 90µA (32Mb)—low-power option
Deep power-down < 10µA
Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Designator
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
See Table 1 on page 6 for ball descriptions, and Figure 45 on
page 52 for 54-ball mechanical drawing.
Options
(continued)
Designator
6
8
1
1
None
L
WT
IT
1
Options
Configuration:
4 Meg x 16
2 Meg x 16
V
CC
Core Voltage Supply:
1.80V – MT45WxMx16B
V
CC
Q I/O Voltage
3.0V – MT45WxML16B
2.5V – MT45WxMV16B
1.8V – MT45WxMW16B
Package
54-ball VFBGA
54-ball VFBGA—Lead-free
Timing
60ns access
70ns access
85ns access
MT45W4Mx16B
MT45W2Mx16B
W
L
1
V
1
W
FB
BB
1
Frequency
66 MHz
80 MHz
104 MHz
Standby power
Standard
Low-power
Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
1. Contact factory.
-60
-70
-85
1
Part Number Example:
MT45W2MW16BFB-706LWT
1
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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