K9F1208R0B
K9F1208B0B
K9F1208U0B
FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. Note 1 ( Program/Erase Characteristics) is added( page 14 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 16 )
-Error in write or read operation ( page 17 )
-Program Flow Chart ( page 17 )
3. Vcc range is changed
-2.4V~2.9V -> 2.5V~2.9V
-1.7V~1.95V ->1.65V~1.95V
4
. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Apr. 24th 2004
Oct. 11th.2004
Remark
Advance
Preliminary
0.2
0.3
1. Icc 15mA -> 20mA for 1.8V device
1. The flow chart to creat the initial invalid block table is changed.
Apr. 22nd. 2005
May. 6th. 2005
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9F1208R0B
K9F1208B0B
K9F1208U0B
FLASH MEMORY
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F1208R0B-G,J
K9F1208B0B-Y,P
K9F1208B0B-G,J
K9F1208U0B-Y,P
K9F1208U0B-G,J
K9F1208U0B-V,F
2.7 ~ 3.6V
Vcc Range
1.65 ~ 1.95V
2.5 ~ 2.9V
PKG Type
FBGA
TSOP1
FBGA
TSOP1
FBGA
WSOP1
FEATURES
•
Voltage Supply
- 1.8V device(K9F1208R0B) : 1.65~1.95V
- 2.7V device(K9F1208B0B) : 2.5~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
•
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
•
Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access
: 15µs(Max.)
- Serial Page Access : 50ns(Min.)
(*K9F1208R0B : tRC = 60ns(Min.))
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Intelligent Copy-Back
•
Unique ID for Copyright Protection
•
Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as
K9F1208U0B-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns(K9F1208R0B : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output
as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s
extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable appli-
cations requiring non-volatility.
2
Power technology
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