EEWORLDEEWORLDEEWORLD

Part Number

Search

SKM150GB101D

Description
Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size321KB,8 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKM150GB101D Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,

SKM150GB101D Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1000 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2000 W
Maximum power dissipation(Abs)1000 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)700 ns
Nominal on time (ton)150 ns
VCEsat-Max4 V

SKM150GB101D Related Products

SKM150GB101D SKM150GB121D SKM150GB102D SKM150GB122D SKM150GAL102D SKM150GAR122D SKM150GAL122D SKM150GAL101D SKM150GAR121D
Description Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
package instruction FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Collector-emitter maximum voltage 1000 V 1200 V 1000 V 1200 V 1000 V 1200 V 1200 V 1000 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
JESD-30 code R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7
Number of components 2 2 2 2 1 1 1 1 1
Number of terminals 7 7 7 7 7 7 7 7 7
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 2000 W 2000 W 2000 W 2000 W 1000 W 1000 W 1000 W 1000 W 1000 W
Maximum power dissipation(Abs) 1000 W 625 W 1000 W 625 W 1000 W 625 W 625 W 1000 W 625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal off time (toff) 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns 700 ns
Nominal on time (ton) 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns
VCEsat-Max 4 V 4 V 4 V 4 V 4 V 4 V 4 V 4 V 4 V
Maker SEMIKRON - - SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON
Problems with oscilloscope high voltage probes
[Ask if you don't understand] As shown in the picture below, this is an oscilloscope high-voltage probe. Does this picture mean that the common-mode voltage of the probe can reach 600-1000v (that is, ...
shaorc Analog electronics
Freescale's next-generation medical electronics MCU
This is the PPT of a technical seminar held at FTF2010 in Shanghai yesterday. I uploaded it here for you to take a look....
bluehacker NXP MCU
What basics are needed to learn programming?
Programmers have high salaries and good working environments, and are a profession that many students aspire to, making many non-computer science majors envious. Does that mean non-computer science ma...
xyd18025265652 Programming Basics
Question: Why does Keil 8 run normally after compilation, but the result is wrong after mode 0 compilation?
#include #include//Header file containing _nop_() function definition/******************************************************** Basic function function: delay 5ns (3j+2)*i=(3×33+2)×10=1010 (microsecond...
cykylxf 51mcu
Help: E-Studio software installation problem for PCB to SCH conversion
This is a problem that occurs when opening the e-studio software after installation. Could anyone explain what this problem is and how to solve it?...
zhangfan487 PCB Design
Does anyone have an unused LPC1343 development board?
I want to tinker with LPC1343 recently. If anyone has an LPC1343 development board that they don't need, could you give me one? I would be very grateful....
winthony NXP MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1683  2865  2200  1993  2092  34  58  45  41  43 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号