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SI9405DY-T1

Description
Small Signal Field-Effect Transistor, 4.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size96KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI9405DY-T1 Overview

Small Signal Field-Effect Transistor, 4.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9405DY-T1 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.3 A
Maximum drain-source on-resistance0.16 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment2.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
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