SKM75GAL101D datasheet, PDF - EEWORLD Datasheet

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SKM75GAL101D: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size313KB，8 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKM75GAL101D Overview

Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel

SKM75GAL101D Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	1000 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	1
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	500 W
Maximum power dissipation(Abs)	500 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	280 ns
Nominal on time (ton)	100 ns
VCEsat-Max	4 V

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SKM75GAL101D Related Products

	SKM75GAL101D	SKM75GAR121D	SKM75GAL121D	SKM75GB101D
Description	Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel,
Maker	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown	unknown	unknown
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	75 A	75 A	75 A	75 A
Collector-emitter maximum voltage	1000 V	1200 V	1200 V	1000 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V	6.5 V	6.5 V	6.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V
JESD-30 code	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7
Number of components	1	1	1	2
Number of terminals	7	7	7	7
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	500 W	500 W	500 W	1000 W
Maximum power dissipation(Abs)	500 W	500 W	500 W	500 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
transistor applications	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	280 ns	280 ns	280 ns	280 ns
Nominal on time (ton)	100 ns	100 ns	100 ns	100 ns
VCEsat-Max	4 V	4 V	4 V	4 V

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