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M29DW640F60N6

Description
Flash, 4MX16, 60ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size1MB,74 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29DW640F60N6 Overview

Flash, 4MX16, 60ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29DW640F60N6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time60 ns
Spare memory width8
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level1
Number of functions1
Number of departments/size16,126
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size4/8 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width12 mm
M29DW640F
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Feature summary
Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at both Top and Bottom)
Dual operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security Code
Extended Memory Block
– Extra block used as security block or to
store additional information
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
ECOPACK
®
packages available
December 2007
Rev 4
1/74
www.numonyx.com
1

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