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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> TZ600N08KOF
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TZ600N08KOF

Description
Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size31KB，4 Pages
ManufacturerEUPEC [eupec GmbH]
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TZ600N08KOF Overview

Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,

TZ600N08KOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.2 V
Quick connection descriptionG-GR
Description of screw terminalsA-K
Maximum holding current300 mA
JESD-30 codeR-XUFM-X4
Maximum leakage current140 mA
On-state non-repetitive peak current17000 A
Number of components1
Number of terminals4
Maximum on-state current670000 A
Maximum operating temperature135 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current1050 A
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Trigger device typeSCR

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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TZ 600 N 08...14
N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
T
vj
= - 40°C...T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 77°C
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
T
vj
= - 40°C...T
vj max
V
DRM
, V
RRM
800, 1000
1200, 1400
800, 1000
1200, 1400
900, 1100
1300, 1500
1050
V
V
V
V
V
V
A
V
DSM
T
vj
= + 25°C...T
vj max
V
RSM
I
TRMSM
I
TAVM
600
670
17000
14000
1445000
980000
200
A
A
A
A
A²s
A²s
A/µs
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1000
V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
T
= 1700A
v
T
max.
1,53
V
T
vj
= T
vj max
V
(TO)
0,9
V
T
vj
= T
vj max
r
T
0,27
mΩ
T
vj
= 25°C, v
D
= 6V
I
GT
max.
250
mA
T
vj
= 25°C, v
D
= 6V
V
GT
max.
2,2
V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
max.
10
5
0,25
mA
mA
V
V
GD
T
vj
= 25°C, v
D
= 6V, R
A
= 5Ω
I
H
max.
300
mA
T
vj
= 25°C, v
D
= 6V, R
GK
≥
10Ω
i
GM
= 1A, di
G
/dt = 1A/µs, t
G
= 20µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, i
TM
= 600A
v
RM
= 100V, V
DM
= 0,67 V
DRM
dv
D
/dt = 20V/µs, -di
T
/dt = 10A/µs
5. Kennbuchstabe / 5th letter O
I
L
max. 1500
mA
i
D
, i
R
max.
140
mA
t
gd
max.
4
µs
t
q
typ.
V
ISOL
250
3,0
3,6
µs
kV
kV
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
SZ-MA; R. Jörke
29. Jul 98
A 109/98
Seite/page 1(4)

TZ600N08KOF Related Products

TZ600N08KOF TZ600N10KOF
Description Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, Silicon Controlled Rectifier, 1050A I(T)RMS, 670000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Maximum DC gate trigger current 250 mA 250 mA
Maximum DC gate trigger voltage 2.2 V 2.2 V
Quick connection description G-GR G-GR
Description of screw terminals A-K A-K
Maximum holding current 300 mA 300 mA
JESD-30 code R-XUFM-X4 R-XUFM-X4
Maximum leakage current 140 mA 140 mA
On-state non-repetitive peak current 17000 A 17000 A
Number of components 1 1
Number of terminals 4 4
Maximum on-state current 670000 A 670000 A
Maximum operating temperature 135 °C 135 °C
Minimum operating temperature -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified
Maximum rms on-state current 1050 A 1050 A
Off-state repetitive peak voltage 800 V 1000 V
Repeated peak reverse voltage 800 V 1000 V
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Trigger device type SCR SCR

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