ZHCS1000TA datasheet, PDF - EEWORLD Datasheet

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ZHCS1000TA: DescriptionRectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, MINIATUER PACKAGE-3; CategoryDiscrete semiconductor diode; File Size162KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZHCS1000TA Overview

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, MINIATUER PACKAGE-3

ZHCS1000TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.6 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	5.2 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40

ZHCS1000TA Preview

SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 2 - OCTOBER 1997

ZHCS1000

FEATURES:

•

High current capability

•

Low V

APPLICATIONS:

•

Mobile telecomms, PCMIA & SCSI

•

DC-DC Conversion

PARTMARKING DETAILS : ZS1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current

Forward Voltage @ I

= 1000mA(typ)

Average Peak Forward Current;D.C.= 50%

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T

amb

= 25° C

Storage Temperature Range

Junction Temperature

SYMBOL

FAV

FSM

tot

stg

VALUE

1000

425

1750

5.2

500

-55 to + 150

125

SOT23

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated).

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

SYMBOL

(BR)R

MIN.

TYP.

240

265

305

355

390

425

495

420

270

290

340

400

450

500

600

—

100

MAX.

UNIT

µA

CONDITIONS.

= 300µA

50mA*

100mA*

250mA*

500mA*

750mA*

1000mA*

1500mA*

1000mA,T

= 100° C

Reverse Current

Diode Capacitance

Reverse Recovery

Time

= 30V

f= 1MHz,V

= 25V

switched from

= 500mA to I

500mA

Measured at I

= 50mA

*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle

≤2%

ZHCS1000

TYPICAL CHARACTERISTICS

100m

IR - Reverse Current (A)

10m

+125°C

IF - Forward Current (A)

100u

+100°C

100m

+50° C

10u

100n

+25°C

10m

+125°C

+25°C

-55°C

-55° C

0.1

0.2

0.3

0.4

0.5

0.6

10n

VF - Forward Voltage (V)

VR - Reverse Voltage (V)

v V

Typical

PF(av) - Avg Pwr Diss (W)

0.8

0.6

Typical

Tj=125°C

IF(av) - Avg Fwd Cur (A)

D=t

F(pk)

F(av)

=D x I

F(pk)

0.6

D=0.5

D=0.2

0.4

D=t

0.4

F(pk)

D=0.1

0.2

D=0.5

D=0.2

D=0.1

D=0.05

0.2

D=0.05

=D x

F(av)

F(pk)

105

115

125

0.4

P =I

F(av)

0.8

1.2

TC - Case Temperature (°C)

IF(av) - Avg Fwd Curr (A)

F(av)

v T

125

200

F(av)

v I

F(av)

100

Rth=100° C/W

Rth=200° C/W

Rth=300° C/W

CD - Diode Capacitance (pF)

Ta - Ambient Temp (°C)

Typical

100

VR - Reverse Voltage (V)

v V

ZHCS1000

TYPICAL CHARACTERISTICS

MAXIMUM TRANSIENT THERMAL RESISTANCE

* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.

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