A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD114813/ALD114913
V
GS(th)
= -1.3V
e
TM
EPAD
E
N
®
AB
LE
D
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAYS
GENERAL DESCRIPTION
ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched
at the factory using ALD’s proven EPAD CMOS technology. These devices are
intended for low voltage, small signal applications. They are excellent functional
replacements for normally-closed relay applications, as they are normally on (con-
ducting) without any power applied, but could be turned off or modulated when
system power supply is turned on. These MOSFETS have the unique character-
istics of, when the gate is grounded, operating in the resistance mode for low
drain voltage levels and in the current source mode for higher voltage levels and
providing a constant drain current.
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user, for
most applications, connect V+ pin to the most positive voltage potential (or left
open unused) and V- and N/C pins to the most negative voltage potential in the
system. All other pins must have voltages within these voltage limits.
FEATURES
• Depletion mode (normally ON) without power
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V
• Nominal R
DS(ON)
@V
GS
=0.0V of 1.3KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• V
GS(th)
match (V
OS
) — 20mV
• High input impedance — 10
12
Ω
typical
• Positive, zero, and negative V
GS(th)
temperature coefficient
• DC current gain >10
8
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
Plastic Dip
Package
ALD114813PC
16-Pin
SOIC
Package
ALD114813SC
8-Pin
Plastic Dip
Package
ALD114913PA
8-Pin
SOIC
Package
ALD114913SA
APPLICATIONS
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters
PIN CONFIGURATION
ALD114813
N/C*
G
N1
D
N1
S
12
V
-
D
N4
G
N4
N/C*
1
2
3
4
5
6
7
8
V
-
V
-
PC, SC PACKAGES
M1
M2
V
-
V
-
16
15
14
N/C*
G
N2
D
N2
V
+
S
34
D
N3
G
N3
N/C*
V
+
V
-
M4
M3
13
12
11
10
9
ALD114913
V-
V-
N/C*
1
2
3
4
8
7
N/C*
G
N1
D
N1
S
12
G
N2
D
N2
V-
M1
M2
6
V-
5
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114813/ALD114913
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
VOS
Min
-1.34
Typ
-1.30
Max
-1.26
Unit
V
Test Conditions
IDS =1µA
VDS = 0.1V
IDS =1µA
Offset Voltage
VGS(th)1-VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
7
20
mV
TCVOS
TCVGS(th)
5
-1.7
0.0
+1.6
12.0
3.0
µV/ °C
mV/
°C
VDS1 = VDS2
ID= 1µA
ID= 20µA, VDS = 0.1V
ID= 40µA
VGS = +8.2 V
VGS = +2.7V
VDS = +5V
VGS = +2.7V
VDS = +7.7V
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
∆G
FS
GOS
RDS (ON)
RDS (ON)
1.4
mmho
Transconductance Mismatch
Output Conductance
1.8
68
%
µmho
VGS =+2.7V
VDS = +7.7V
VDS = 0.1V
VGS = +2.7V
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
500
Ω
Drain Source On Resistance
1.3
KΩ
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
∆R
DS (ON)
BVDSX
IDS (OFF)
IGSS
CISS
CRSS
ton
toff
10
7
%
0.5
%
V
IDS = 1.0µA
VGS = -2.3V
VGS =-2.3V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD114813/ALD114913
Advanced Linear Devices
2
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