HY27US16561M-FPCB datasheet, PDF

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HY27US16561M-FPCB: DescriptionFlash, 16MX16, 10000ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63; Categorystorage storage; File Size733KB，44 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY27US16561M-FPCB Overview

Flash, 16MX16, 10000ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63

HY27US16561M-FPCB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	10000 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
length	11 mm
memory density	268435456 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
type	SLC NAND TYPE
width	9 mm

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HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Document Title

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Revision History

No.

0.0

0.1

0.2

Initial Draft

Renewal Product Group

Append 1.8V Operation Product to Data sheet

Insert Spare Enable function for GND Pin(#6)

- In case of Reading or Programming, GND Pin(#6) should be Low

or High.

- Change the test condition of Stand-by current-Refer to Table 13.

Change CSP Package name & thickness

- Name : VFBGA -> FBGA

- Thickness : 1.0mm(max) -> 1.2mm(max)

1) Delete Cache Program Mode

2) Modify the description of Device Operations

- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read

Disabled(Enabled) (Page23)

1) change FBGA dimension

Thickness : 1.2mm(max) -> 1.0mm(max)

2) Edit Fig.33 read operation with CE don't care

1) Change TSOP1,WSOP1,FBGA package dimension

0.6

- Change TSOP1,WSOP1,FBGA mechanical data

- Inches parameter has been excluded from the mechanical data table

1) Change TSOP1, WSOP1, FBGA package dimension

2) Edit TSOP1, WSOP1 package figures

3) Change FBGA package figure

Oct. 18. 2004

Preliminary

History

Draft Date

Jul. 10. 2003

Dec. 08. 2003

Remark

Preliminary

0.3

Mar. 08. 2004

Preliminary

0.4

Jun. 01. 2004

Preliminary

0.5

Sep. 24. 2004

Preliminary

0.7

Oct. 20. 2004

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.7 / Oct. 2004

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

DESCRIPTION

The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The

devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words

(256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus.

This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is

strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hard-

ware protection against program and erase operations.

The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER)

Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to

be connected to a single pull-up resistor.

A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation

fails, the data can be programmed in another page without having to resend the data to be programmed.

The devices are available in the following packages:

48-TSOP1

(12 x 20 x 1.2 mm)

- 48-WSOP1

(12 x 17 x 0.7 mm)

- 63-FBGA

(9.0 x 11 x 1.0 mm, 6 x 8 ball array, 0.8mm pitch)

Three options are available for the NAND Flash family:

- Automatic Page 0 Read after Power-up, which allows the microcontroller to directly download the boot code from

page 0.

- Chip Enable Dont Care, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions

during the latency time do not stop the read operation.

- A Serial Number, which allows each device to be uniquely identified. The Serial Number options is subject to an NDA

(Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your near-

est HYNIX Sales office.

Devices are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to

'1'.

Rev 0.7 / Oct. 2004

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