PJB772/PJB772S
PNP Epitaxial Silicon Transistor
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
Complement to PJD882
PW 10µs,Duty Cycle 50%
Pulse Test PW 350µs,Duty Cycle 2%
TO-92
TO-126
Pin : 1. Emitter
2. Collector
3. Base
ABSOLUTE MAXIMUM RATINGS
(Tc = 25
℃
)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Bias Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25℃)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
P
C
Tj
Tstg
Rating
-50
-40
-5
-3
-5
-0.6
-
10
150
-
55~150
Unit
V
V
V
A
A
A
W
W
℃
℃
TO-252
Pin : 1. Base
2. Collector
3. Emitter
ORDERING INFORMATION
Device
PJB772SCT
PJB772CK
PJB772CP
Operating Temperature
-20℃〜+85℃
Package
TO-92
TO-126
TO-252
ELECTRICAL CHARACTERISTICS
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation
Voltage
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
(Tc = 25
℃
)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
NF
Test condition
V
CB
=-30V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-2V,I
C
=-20mA
V
CE
=-2V,I
C
=-1A
I
C
=-2A,I
B
=-0.2A
I
C
=-2A,I
B
=-0.2A
V
CE
=-5V,I
C
=0.1A
V
CB
=-10V,I
E
=0
f=1MHz
V
CE
=10V,I
C
=1mA
R
S
=10K,f=1KHz
4
dB
30
60
220
160
-0.3
-1.0
80
55
400
-0.45
-2.0
V
V
MHz
pF
Min
Typ
Max
-1
-1
Unit
µA
µA
h
FE
(2) CLASSIFICATION
Classification
h
FE
(2)
R
60-120
O
100-200
Y
160-320
G
200-400
1-4
2003/10.rev.A
PJB772/PJB772S
PNP Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
COLLECTOR OUTPUT CAPACITANCE
CURRENT GAIN-BANDWIDTH PRODUCT
SAFE OPERATING AREAS
DERATING CURVE OF SAFE OPERATING AREAS
POWER DERATING
2-4
2003/10.rev.A
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