PJB772O datasheet, PDF - EEWORLD Datasheet

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PJB772O: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126; CategoryDiscrete semiconductor The transistor; File Size317KB，4 Pages; ManufacturerPromax-Johnton Electronic Corporation

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PJB772O Overview

Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126

PJB772O Parametric

Parameter Name	Attribute value
Maker	Promax-Johnton Electronic Corporation
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

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PJB772/PJB772S

PNP Epitaxial Silicon Transistor

AUDIO FREQUENCY POWER AMPLIFIER

LOW SPEED SWITCHING

Complement to PJD882

PW 10µs,Duty Cycle 50%

Pulse Test PW 350µs,Duty Cycle 2%

TO-92

TO-126

Pin : 1. Emitter

2. Collector

3. Base

ABSOLUTE MAXIMUM RATINGS

(Tc = 25

℃

)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Bias Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

Collector Dissipation (Ta=25℃)

Collector Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

Tstg

Rating

-50

-40

-5

-3

-5

-0.6

150

55~150

Unit

℃

TO-252

Pin : 1. Base

2. Collector

3. Emitter

ORDERING INFORMATION

Device

PJB772SCT

PJB772CK

PJB772CP

Operating Temperature

-20℃〜+85℃

Package

TO-92

TO-126

TO-252

ELECTRICAL CHARACTERISTICS

Characteristics

Collector Cutoff Current

Emitter Cutoff Current

*DC Current Gain

*Collector Emitter Saturation

Voltage

*Base Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

(Tc = 25

℃

)

Symbol

CBO

EBO

FE1

FE2

CE(SAT)

BE(SAT)

Cob

Test condition

=-30V,I

=-3V,I

=-2V,I

=-20mA

=-2V,I

=-1A

=-2A,I

=-0.2A

=-2A,I

=-0.2A

=-5V,I

=0.1A

=-10V,I

f=1MHz

=10V,I

=1mA

=10K,f=1KHz

220

160

-0.3

-1.0

400

-0.45

-2.0

MHz

Min

Typ

Max

-1

Unit

µA

(2) CLASSIFICATION

Classification

(2)

60-120

100-200

160-320

200-400

1-4

2003/10.rev.A

PJB772O Related Products

	PJB772O	PJB772R	PJB772SR	PJB772G
Description	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
Maker	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	CYLINDRICAL, O-PBCY-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	60	200
JEDEC-95 code	TO-126	TO-126	TO-92	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	O-PBCY-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	CYLINDRICAL	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	BOTTOM	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz

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