PJC945CX datasheet, PDF - EEWORLD Datasheet

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PJC945CX: DescriptionSmall Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，2 Pages; ManufacturerPromax-Johnton Electronic Corporation

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PJC945CX Overview

Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

PJC945CX Parametric

Parameter Name	Attribute value
Maker	Promax-Johnton Electronic Corporation
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.12 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

PJC945CX Preview

PJC945

NPN Epitaxial Silicon Transistor

AUDIO FREQUENCY AMPLIFIER

HIGH FREQUENCY OS C.

•

Complement to PJA733

Excellent DC Current Gain Linearly 0.1mA to 50mA

Low Output Capacitance Cob=2.5PF(Typ.) @V

CB

=6V,f=1MHz

Low Noise Figure NF=2.5dB(TYP.) I

C

=0.1mA,V

CE

=

6V Rg= 2KΩ,f=1KHz

DC Current Gain Selection Available

TO-92

SOT-23

•

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Device Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

Ic

P

D

P

D

Tj

Tstg

Rating

60

50

5

120

450

1.2

150

-55 ~150

Unit

V

mA

mW

W

°C

P in : 1. Emitter

2. Colletor

3. Base

P in : 1. Base

2. Emitter

3. Collector

ORDERING INFORMATION

Device

PJC945CT

PJC945CX

Operating Temperature

-20℃½+85℃

Package

TO-92

SOT-23

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current-Gain-Bandwidth Product

Output Capacitance

Noise Figure

h

FE

(2)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

I

CEO

h

FE(1)

h

FE(2)

V

CE (SAT)

V

BE (SAT)

V

BE (on)

f

T

C

Ob

NF

Test

Condition

Ic = 10µA, I

E

= 0

Ic =1.0mA, I

B

=0

I

E

=

_

10µA, I

C

= 0

V

CB

= 45V,I

E

=0

V

EB

=3V,I

C

=0

V

CE

=40V,I

B

=0

V

CE

=6V,I

c

=0.1 mA

V

CE

=6V,I

c

=1.0 mA

I

C

=10mA,I

B

=1mA

I

C

=10mA,I

B

=1mA

I

C

=0.1mA,V

CE

=6V

V

CE

=6V,I

C

=10mA

V

CB

=6V,I

E

=0

f=1MH

Z

V

CE

=6V,I

E

=

_

0.5mA

f=1KH

Z

,Rs=2KΩ

Min

80

50

5

Typ

Max

0.1

1

50

70

0.09

0.81

0.6

250

2.5

70

0.3

1

0.65

450

5

15

Unit

V

µA

0.55

150

V

MHz

pF

dB

CLASSIFICATION

R

70-140

P

120-240

Q

200-400

K

350-700

Classification

h

FE(2)

1-2

2002/01.rev.A

PJC945

NPN Epitaxial Silicon Transistor

2-2

2002/01.rev.A

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PJC945CX Related Products

	PJC945CX	PJC945CT
Description	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Maker	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation
Parts packaging code	SOT-23	TO-92
package instruction	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.12 A	0.12 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	90	90
JESD-30 code	R-PDSO-G3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz

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