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PH1516-60

Description
L BAND, Si, NPN, RF POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size194KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Environmental Compliance
Download Datasheet Parametric View All

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PH1516-60 Overview

L BAND, Si, NPN, RF POWER TRANSISTOR

PH1516-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTE Connectivity
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)10 A
Collector-emitter maximum voltage24 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

PH1516-60 Preview

*
z-,-3
y--z
.-- =:
---
---
----= z
=-
z =
an AMP company
Wireless Bipolar Power Transistor,
1450 - 1550
MHz
Features
Designed for Linear Amplifier Applications
Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP
Class A: +53 dBm Typ 3rd Order Intercept Point
Common Emitter Configuration
Internal Input Impedance Marching
Diffused Emitter Ballasting
‘f
60W
PHI516160
.22st.010
C5.72t.25)
f
.^^
/
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
Vcm
VCES
VEm
1,
P,
T,
T srt
8JC
(
65
65
3.0
10
116
200
-55 to +150
1.5
V
V
V
]
A
W
“C
“C
“CIW
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES t.005
<,,,ILUnETERS
r,13M,,,>
Electrical Characteristics
at 25°C
Typical Optimum Device Impedances
F(MHr)
Z,(Q)
2.2 + j5.0
2.7+j4.5
2.1 + j3.7
1450
1500
1550
Wireless Bipolar Power Transistor, 60W
PH1516-60
RF Test Fixture
vB
“cc
CR1
GD
INPUT
50 OHMS
DUTPUT
50
OHMS
ARTWORK
DIMENSIONS
IN
MILS
Cl c2 c3 c4
C5
C6
CR1
Ll
Ql
Rl
RLl
18pF
ATC
SIZE
B
CAPACITOR
CAPACITOR
5OOOpF CHIP CAPACITOR
50 VOLT
5OuF
ELECTROLYTIC
lN5417
7 TURNS
PH1516-60
4.7 OHM
10 TURNS
DIODE
OF
l/2
OF
Nil.
WATT
ND
26
22
AWG CIN
,125'
DIA
RESISTOR
AWG
IIN
3
=
OHM
10.5
BUARD
TYPE:
l/4
WATT
RESISTOR
ROGERS
601Os5
,025"THICK,
ER
Wireless Bipolar Power Transistor,
60W
PH1516-60
v2.00
Typical Broadband Performance
Curves
GAIN-EFFICIENCY
11
P,,=60
vs FREQUENCY
- loo
. 60
OUTPUT
90
75
-
POWER vs COLLECTOR
VOLTAGE
W PEP I’,,=26 V I,,=25 mA
1,,=25mA F1=1500.0MHz F2=1500.1 MHz
Gain
60
- 60
CW Efficiency
.40--
2
2
z
a
,r
+45
s
30
-
$?
Tone
- 20
0
Efficiency
7 -
6 - . s
1450
1500
15
0
12
14
16
18
20
22
24
26
28
1550
FREQUENCY
(MHz)
COLLECTOR
VOLTAGE (V)
UMIIY
vs rouT
-15
IMD vs P,,
F1=1500.0 MHz F2=1500.1 MHz Vcc=26 V I,,=25 mA
9
l500.0MHz Fl=lSOO.l MHz
3.5 A
I
MessAB
6
4'
30.
34
38
P,,
VW
42
46
J
50
20
34
38
P,,PEPin
42
46
50
dBm
IMD vs P,,
F1=1500.0 MHz F2=1500.1 MHZ Vcc=26 V 1,,=200 mA
IMD vs P,,
F1=1500.0 MHz F2=1500.1 MHz V,,=20 V 1,,=3.5 A
Class A
3rd
30
34
PaPEP
in dBm2
46
50
30
33
%P,,PEP~B
dBm
42
45
48
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