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PD438B/TR1(R)

Description
Optoelectronic Device,
CategoryLED optoelectronic/LED    photoelectric   
File Size407KB,9 Pages
ManufacturerEVERLIGHT
Websitehttp://www.everlight.com/
Download Datasheet Parametric View All

PD438B/TR1(R) Overview

Optoelectronic Device,

PD438B/TR1(R) Parametric

Parameter NameAttribute value
MakerEVERLIGHT
Reach Compliance Codecompliant

PD438B/TR1(R) Preview

4.8mm Semi-Lens Silicon PIN Photodiode
PD438B/TR1(R)
Features
․Fast
response times
․High
photo sensitivity
․Small
junction capacitance
․Pb
free
․The
product itself will remain within RoHS compliant version.
․Compliance
with EU REACH
Description
․PD438B/TR1(R)
is a high speed and sensitive PIN photodiode in a cylindrical side
view plastic package. The epoxy package itself is an IR filter , spectrally
matched to IR emitter.
Applications
․High
speed photo detector
․Camera
․Optoelectronic
switch
․VCRs
, Video camera
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.13.2016. Issue No: DPD-0000114_Rev.3
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B/TR1(R)
Device Selection Guide
Chip
Materials
Lens Color
Black
Silicon
Absolute Maximum Ratings (Ta=25℃)
Parameter
Reverse Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
R
Pd
T
opr
T
stg
Rating
32
150
-40 ~ +85
-40 ~ +100
260
Unit
V
mW
Soldering Temperature(*1)
T
sol
Notes:
*1: Soldering time≦5 seconds.
:
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.13.2016. Issue No: DPD-0000114_Rev.3
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B/TR1(R)
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang of Spectral
Bandwidth
Wavelength of Peak
Sensitivity
Open-Circuit Voltage
Symbol
λ0.5
λp
Min.
Typ.
Max.
Unit
nm
Condition
400
-----
-----
940
1100
-----
-----
-----
Ee=5m W/cm2
λp=940nm
Ee=1m W/cm2
λp=940nm
Ee=1m W/cm2
nm
VOC
-----
0.35
-----
V
Short- Circuit Current
ISC
-----
18
-----
uA
Reverse Light Current
I
L
10.2
18
-----
uA
λp=940nm
VR=5V
Ee=0m W/cm2
VR=10V
Dark Current
Id
----
5
30
nA
Reverse Breakdown
BVR
32
170
-----
V
Ee=0m W/cm2
IR=100μA
Ee=0m W/cm2
VR=3V
f=1MHZ
VR=10V
RL=1KΩ
Total Capacitance
Ct
----
25
----
pF
Rise/Fall Time
tr/tf
----
50/50
----
nS
Note:
Tolerance of Luminous Intensity: ±10%
Tolerance of Dominant Wavelength: ±1nm
Tolerance of Forward Voltage: ±0.1V
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.13.2016. Issue No: DPD-0000114_Rev.3
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B/TR1(R)
Typical Electro-Optical Characteristics Curves
Power Dissipation vs. Ambient Temperature
Spectral
Sensitivity
200
1.0
Ta=25
C
O
150
0.8
0.6
100
0.4
50
0.2
0
-25
0
25
50
75 85 100
0
600 700 800 900 1000 1100 1200
Dark Current vs. Ambient Temperature
Reverse Light Current vs. Ee
1000
40
30
100
20
10
10
V
R
=5V
V
R
=10V
1
20
40
60
80
100
0
0.5
1
1.5
2
3
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.13.2016. Issue No: DPD-0000114_Rev.3
www.everlight.com
DATASHEET
4.8mm Semi-Lens Silicon PIN Photodiode
PD438B/TR1(R)
Terminal Capacitance vs. Reverse Voltage
Response Time vs. Load Resistance
80
f=1MH
Z
2
t
10
1
V
R
=10V
Ta=25°C
60
10
0
40
10
-1
20
10
10
-2
-3
0
0.1
1
10
100
10
1
10
2
10
3
10
4
10
5
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : Dec.13.2016. Issue No: DPD-0000114_Rev.3
www.everlight.com
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