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BD538

Description
TRANSISTOR,BJT,PNP,80V V(BR)CEO,4A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size273KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

BD538 Overview

TRANSISTOR,BJT,PNP,80V V(BR)CEO,4A I(C),TO-220AB

BD538 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)15
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz

BD538 Related Products

BD538 BD536
Description TRANSISTOR,BJT,PNP,80V V(BR)CEO,4A I(C),TO-220AB BD536
Is it Rohs certified? incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code not_compliant not_compliant
Maximum collector current (IC) 4 A 4 A
Configuration Single Single
Minimum DC current gain (hFE) 15 25
JESD-609 code e0 e0
Maximum operating temperature 140 °C 140 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 50 W 50 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 3 MHz 3 MHz
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