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BD536

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size151KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
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Transistor

BD536 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)25
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Nominal transition frequency (fT)3 MHz

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