BC237/238/239
BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
: BC237
: BC238/239
: BC237
: BC238/239
: BC237
: BC238/239
1
TO-92
1. Collector 2. Base 3. Emitter
Value
50
30
45
25
6
5
100
500
150
-55 ~ 150
Units
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Base Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
Test Condition
I
C
=2mA, I
B
=0
Min.
45
25
I
E
=1µA, I
C
=0
6
5
V
CE
=50V, V
BE
=0
V
CE
=30V, V
BE
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=3V, I
C
=0.5mA, f=100MHz
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CE
=5V, I
C
=0.2mA,
f=1KHz R
G
=2KΩ
V
CE
=5V, I
C
=0.2mA
R
G
=2KΩ, f=30~15KHz
0.55
150
120
0.07
0.2
0.73
0.87
0.62
85
250
3.5
8
2
10
4
4
6
0.2
0.2
15
15
800
0.2
0.6
0.83
1.05
0.7
V
V
V
V
V
MHz
MHz
pF
pF
dB
dB
dB
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
h
FE
Classification
Classification
h
FE
©2000 Fairchild Semiconductor International
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
Rev. B, January 2001
BC237/238/239
Typical Characteristics
100
100
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 350
μA
I
B
= 300
μA
I
B
= 250
μA
I
B
= 200
μA
I
C
[mA], COLLECTOR CURRENT
I
B
= 400
μA
V
CE
= 5V
10
60
40
I
B
= 150
μA
I
B
= 100
μA
1
20
I
B
= 50
μA
0
0
2
4
6
8
10
12
14
16
18
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
V
CE
= 5V
1000
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1000
V
BE
(sat)
100
100
10
V
CE
(sat)
1
1
10
100
1000
10
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
1000
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT
C
ob
[pF], CAPACITANCE
f=1MHz
I
E
= 0
10
V
CE
= 5V
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. B, January 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
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