Standard SRAM, 64KX4, 25ns, CMOS, CDIP28
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Paradigm Technology Inc |
| package instruction | DIP, DIP28,.3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 25 ns |
| Other features | HIGH IMPEDENCE OUTPUTS DURING WRITE MODE |
| I/O type | SEPARATE |
| JESD-30 code | R-GDIP-T28 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 28 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 64KX4 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.0005 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.14 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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