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PDM34078SA10QTY

Description
Cache SRAM, 32KX32, CMOS, PQFP100
Categorystorage    storage   
File Size312KB,14 Pages
ManufacturerParadigm Technology Inc
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PDM34078SA10QTY Overview

Cache SRAM, 32KX32, CMOS, PQFP100

PDM34078SA10QTY Parametric

Parameter NameAttribute value
MakerParadigm Technology Inc
package instructionQFP,
Reach Compliance Codeunknown
ECCN codeEAR99
JESD-30 codeR-PQFP-G100
memory density1048576 bit
Memory IC TypeCACHE SRAM
memory width32
Number of functions1
Number of ports1
Number of terminals100
word count32768 words
character code32000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX32
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal locationQUAD

PDM34078SA10QTY Preview

PDM34078
3.3V 32K x 32 Fast CMOS
Synchronous Static RAM
with Burst Counter
and Output Register
Features
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Description
The PDM34078 is a 1,048,576 bit synchronous
random access memory organized as 32,768 x 32
bits. This device designed with burst mode
capability and interface controls to provide high-
performance in second level cache designs for x86,
Pentium, 680x0, and PowerPC microprocessors.
Addresses, write data and all control signals except
output enable are controlled through positive edge-
triggered registers. Write cycles are self-timed and
are also initiated by the rising edge of the clock.
Controls are provided to allow burst reads and
writes of up to four words in length. A 2-bit burst
address counter controls the two least-significant
bits of the address during burst reads and writes.
The burst address counter selectively uses the 2-bit
counting scheme required by the x86 and Pentium
or 680x0 and PowerPC microprocessors as con-
trolled by the mode pin. Individual write strobes
provide byte write for the four 8-bit bytes of data.
An asynchronous output enable simplifies interface
to high-speed buses.
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Interfaces directly with the x86, Pentium™, 680X0
and PowerPC™ processors
(100, 80, 66, 60, 50 MHz)
Single 3.3V power supply
Mode selectable for interleaved or linear burst:
Interleaved for x86 and Pentium
Linear for 680x0 and PowerPC
High-speed clock cycle times:
10, 12.5, 15, 16.7 and 20 ns
High-density 32K x 32 architecture with burst
address counter and output register
Fully registered inputs and outputs for pipelined
operation
High-output drive: 30 pF at rated T
A
Asynchronous output enable
Self-timed write cycle
Separate byte write enables and one global write
enable
Internal burst read/write address counter
Internal registers for address, data, controls
Output data register
Burst mode selectable
Sleep mode
Packages:
100-pin QFP - (Q)
100-pin TQFP - (TQ)
TM
i486, Pentium are trademarks of Intel Corp. PowerPC is a trademark of the International Business Machines Corporation.
1
Rev 1.0 - 5/01/98
PDM34078
Functional Block Diagram
A14-A0
15
ADDRESS
REGISTER
15
13
15
A1,A0
MODE
ADV
CLK
Q0
A0'
BURST
COUNTER
AND LOGIC
CLR
Q1
A1'
ADSC
ADSP
BW1
8
BYTE 1
WRITE REGISTER
8
BYTE 4
WRITE DRIVER
8
BW2
BYTE 2
WRITE REGISTER
8
BYTE 3
WRITE DRIVER
8
BW3
32K x 32
MEMORY
ARRAY
32
OUTPUT
REGISTERS
OUTPUT
BUFFER
32
DQ32-DQ1
BYTE 3
WRITE REGISTER
8
BYTE 2
WRITE DRIVER
8
BW4
BWE
GW
CE
CE2
BYTE 4
WRITE REGISTER
BYTE 1
WRITE DRIVER
8
ENABLE
REGISTER
CE2
OE
INPUT
REGISTERS
2
Rev 1.0 - 5/01/98
PDM34078
PDM34078 Pinout
CE2
V
CC
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
BW4
BW3
BW2
BW1
CE2
1
A8
A9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
DQ16
DQ15
V
CCQ
V
SSQ
DQ14
DQ13
DQ12
DQ11
V
SSQ
V
CCQ
DQ10
DQ9
V
SS
NC
V
CC
ZZ
DQ8
DQ7
V
CCQ
V
SSQ
DQ6
DQ5
DQ4
DQ3
V
SSQ
V
CCQ
DQ2
DQ1
NC
CE
A6
A7
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
DQ17
DQ18
V
CCQ
V
SSQ
DQ19
DQ20
DQ21
DQ22
V
SSQ
V
CCQ
DQ23
DQ24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
2
3
4
5
6
7
8
9
10
11
12
FT
V
CC
NC
V
SS
DQ25
DQ26
V
CCQ
V
SSQ
DQ27
DQ28
DQ29
DQ30
V
SSQ
V
CCQ
DQ31
DQ32
NC
Rev 1.0 - 5/01/98
MODE
A5
A4
A3
A2
A1
A0
NC
NC
V
SS
V
CC
NC
NC
A10
A11
A12
A13
A14
NC
NC
3
PDM34078
Pinout
Name
A14-A2
A1, A0
DQ1-DQ32
NC
MODE
(1)
ADV
ADSC
ADSP
GW
FT
(1)
I/O
I
I
I/O
I
I
I
I
I
I
Description
Address Inputs A14-A2
Address Inputs A1 & A0
Read/Write Data
No Connect
Burst Sequence Select
Burst Counter Advance
Controller Address Status
Processor Address Status
Global Write
Must be tied HIGH for
proper operation
Name
CE
, CE2,
CE2
BWE
BW1
-
BW4
OE
I/O
I
I
I
I
I
I
Description
Chip Enables
Byte Write Enable
Byte Write Enables
Output Enable
Clock
Sleep Mode
Power Supply (+3.3V)
Output Power for DQ’s (+3.3V
±5%)
Array Ground
Output Ground for DQ’s
CLK
ZZ
V
CC
V
CCQ
V
SS
V
SSQ
NOTE: 1.MODE and
FT
are DC operated pins. Do not alter input state while device is operating.
Burst Sequence Table
Burst Sequence
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
Note:
Interleaved
(1)
Mode = NC or
V
CC
A14-A2, A1, A0
A14-A2, A1, A0
A14-A2, A1, A0
A14-A2, A1, A0
A14-A2,0,0
A14-A2,0,1
A14-A2,1,0
A14-A2,1,1
Linear
(2)
Mode = V
SS
A14-A2,0,1
A14-A2,1,0
A14-A2,1,1
A14-A2,0,0
A14-A2,1,0
A14-A2,1,1
A14-A2,0,0
A14-A2,0,1
A14-A2,1,1
A14-A2,0,0
A14-A2,0,1
A14-A2,1,0
1. Interleaved = x86 and Pentium.
2. Linear = 680x0 and Power PC compatible.
Asynchronous Truth Table
Operation
Partial Truth Table for Writes
GW
BWE
BW1 BW2 BW3 BW4
Function
ZZ
OE
I/O Status
Read
Read
Write
Deselected
Sleep
L
L
L
L
H
L
H
X
X
X
Data Out
High-Z
High-Z: Write Data In
High-Z
High-Z
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
READ
READ
WRITE Byte 1
WRITE All Bytes
WRITE All Bytes
NOTE: 1. L = Low, H = High, X = Don’t Care.
2. For a write operation following a read operation,
OE must be high before the input data required
setup time and held high through the input data
hold time.
3. This device contains circuitry that will ensure
the outputs will be in high-Z during powerup.
NOTE: 1. L = Low, H = High, X = Don’t Care.
2. Using BWE and BW1 through BW4, any one or
more bytes may be written.
4
Rev 1.0 - 5/01/98
PDM34078
Synchronous Truth Table
(See Notes 1 through 3)
CE
H
L
L
L
L
L
L
X
H
X
H
L
X
H
X
H
CE2
X
X
H
X
H
L
L
X
X
X
X
L
X
X
X
X
CE2
X
L
X
L
X
H
H
X
X
X
X
H
X
X
X
X
ADSP
X
L
L
H
H
L
H
H
X
H
X
H
H
X
H
H
ADSC
L
X
X
L
L
X
L
H
H
H
H
L
H
H
H
H
ADV
X
X
X
X
X
X
X
L
L
H
H
X
L
L
H
H
BWx
X
X
X
X
X
X
X
H
H
H
H
L
L
L
L
L
CLK
Address
N/A
N/A
N/A
N/A
N/A
External
External
Next
Next
Current
Current
External
Next
Next
Current
Current
Operation
Deselected
Deselected
Deselected
Deselected
Deselected
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Begin Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
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NOTES:
1. X = Don’t Care, H = logic High, L = logic Low, BWx = any one or more byte write enable signals (BW1, BW2, BW3, BW4)
and BWE are low, or GW is low.
2. BW1 enables BWx to Byte 1 (DQ1-DQ8). BW2 enables BWx to Byte 2 (DQ9-DQ16).
BW3 enables BWx to Byte 3 (DQ17-DQ24), BW4 enables BWx to Byte 4 (DQ25-DQ32).
3. ADV must always be high at the rising edge of the first clock after an ADSP cycle is initiated if a write cycle is desired (to
ensure use of correct address).
Rev 1.0 - 5/01/98
5

PDM34078SA10QTY Related Products

PDM34078SA10QTY PDM34078SA10TQ PDM34078SA10TQA
Description Cache SRAM, 32KX32, CMOS, PQFP100 Cache SRAM, 32KX32, 10ns, CMOS, PQFP100 Standard SRAM, 32KX32, 10ns, CMOS, PQFP100
Maker Paradigm Technology Inc Paradigm Technology Inc Paradigm Technology Inc
package instruction QFP, QFP, QFP100,.63X.87 QFP, QFP100,.63X.87
Reach Compliance Code unknown unknown unknown
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
memory density 1048576 bit 1048576 bit 1048576 bit
Memory IC Type CACHE SRAM CACHE SRAM STANDARD SRAM
memory width 32 32 32
Number of terminals 100 100 100
word count 32768 words 32768 words 32768 words
character code 32000 32000 32000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 105 °C
organize 32KX32 32KX32 32KX32
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QFP QFP QFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING
Terminal location QUAD QUAD QUAD
ECCN code EAR99 EAR99 -
Number of functions 1 1 -
Number of ports 1 1 -
Exportable YES YES -
Maximum supply voltage (Vsup) 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3 V 3 V -
Is it Rohs certified? - incompatible incompatible
Maximum access time - 10 ns 10 ns
Maximum clock frequency (fCLK) - 60 MHz 60 MHz
I/O type - COMMON COMMON
JESD-609 code - e0 e0
Encapsulate equivalent code - QFP100,.63X.87 QFP100,.63X.87
power supply - 3.3 V 3.3 V
Maximum standby current - 0.003 A 0.003 A
Minimum standby current - 3 V 3 V
Maximum slew rate - 0.23 mA 0.23 mA
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal pitch - 0.635 mm 0.635 mm

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