UHF POWER TRANSISTOR
DRF1402F
NPN SiGe RF TRANSISTOR
SOT-89
The DRF1402F is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-89 SMD package.
The DRF1402F can be used as a driver device or
an output device, depending on the specific application
4
□
FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz
PIN CONFIGURATION
□
APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.
PIN NO
1
2
3
4
SYMBOL
B
C
E
C
DESCRIPTION
base
collector
emitter
collector
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃ ; note 1
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
20
8
4
350
1
-65 ~ 150
150
Unit
V
V
V
mA
W
℃
℃
www.tachyonics.co.kr
- 1/6 -
Sep-03-2002
2nd Edition
UHF POWER TRANSISTOR
DRF1402F
□
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITION
P
T
=1W; Ts=60℃;note1
VALUE
55
Unit
K/W
* Note 1. Ts is temperature at the soldering point of the collector pin.
□
QUICK REFERENCE DATA
RF performance at Ts
≤
60
℃
in common emitter test circuit (see Fig 8.)
Mode of Operation
CW, class-AB
f [MHz]
465
V
CE
[V]
4.8
P
L
[mW]
630
G
P
[dB]
≥
10
η
C
[%]
≥ 60
www.tachyonics.co.kr
- 2/6 -
Sep-03-2002
2nd Edition
UHF POWER TRANSISTOR
DRF1402F
□
DC CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
BV
CBO
BV
CEO
BV
EBO
Is
h
FE
Cc
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
CONDITION
open emitter
open base
open collector
MIN.
20
8
3
0.1
60
MAX.
UNIT
V
V
V
mA
Collector leakage current
DC current gain
Collector capacitance
4.5
pF
160
Hfe 140
120
100
80
60
40
20
6
Cc
[pF]
5
4
3
2
0
0.00
0
0.10
0.20
0.30
0.40
Ic(A)
0.50
2
4
6
8
10
V
CB
[V]
V
CE
= 4.8V ; Tj =25℃
f=900MHz; V
CE
=4.8V; I
CQ
=5mA; Ts < 60℃
Fig 1. DC Current gain v.s Collector current
Fig 2. Collector-base capacitance v.s Collector-
base voltage(DC)
www.tachyonics.co.kr
- 3/6 -
Sep-03-2002
2nd Edition
UHF POWER TRANSISTOR
DRF1402F
□
APPLICATION INFORMATION
RF performance at Ts
≤
60
℃
in common emitter configuration.
Mode of Operation
CW, class-AB
f [MHz]
465
V
CE
[V]
4.8
P
L
[mW]
630
G
P
[dB]
≥
10
η
C
[%]
≥ 60
DRF1402F Source/Load Impedance as a frequency
V
CE
= 4.8V, I
CQ
= 5mA, Pout = 28dBm
Z
S
[Ω]
Z
L
[Ω]
Freq.
[MHz]
440
450
460
470
Rs
17.34
17.21
17.12
17.09
Xs
6.91
7.89
8.90
9.95
R
L
22.21
19.31
17.20
15.66
X
L
-0.59
2.58
7.07
19.00
DRF1402F Transister Impedance
Z
L
Zs
20
30
Z
S
18
[Ω]
16
14
12
10
8
6
4
430
440
450
Rs
Z
L
[Ω]
25
20
15
10
R
L
Xs
5
0
-5
-10
X
L
460
470
480
430
440
450
460
470
480
Freq[MHz]
Freq [MHz]
Fig 5. Source Impedance (series components) as
a freq, typical values.
Fig 6. Load Impedance (series components) as
a freq, typical values.
www.tachyonics.co.kr
- 4/6 -
Sep-03-2002
2nd Edition
UHF POWER TRANSISTOR
DRF1402F
Vcc
Part List
C1, C7,C10,C11
C3,C4
C2
C5
C6
470pF
6pF
8pF
7pF
12pF
1nF
100nF
8.2nH
3turn
8turn
2 mm
50
RF IN
RF_OUT
C9,C12
C8,C13
L1(Chip L : 1608)
L2,L3,L4 (Air Coil)
L5,L6 (Air Coil)
Air Coil Diameter
: Air Coil
79.5
Unit : mm
Fig 7. DRF1402F Test Circuit Board Layout @ f = 465MHz
Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm
Test condition : CW test, V
CC
= 4.8 V, I
CQ
= 5 mA, frequency = 465 MHz.
Fig 8. Test Circuit Schematic Diagram @f = 465MHz
www.tachyonics.co.kr
- 5/6 -
Sep-03-2002
2nd Edition
京公网安备 11010802033920号
EEWORLD
