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SB20H200CT-1E3

Description
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size379KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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SB20H200CT-1E3 Overview

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode

SB20H200CT-1E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-262AA
package instructionLEAD FREE, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown

SB20H200CT-1E3 Preview

MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB
ITO-220AB
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
j
2 x 10 A
200 V
290 A
0.75 V
175 °C
1
2
3
1
2
3
MBR20H200CT
MBRF20H200CT
TO-262AA
Features
Guarding for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
1
2
3
SB20H200CT-1
PIN 1
PIN 3
PIN 2
CASE
Mechanical Data
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte Tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
Typical Applications
For use in high frequency inverters, free wheeling and
polarity protection applications
Maximum Ratings
(T
C
= 25 °C, unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
V
C
dv/dt
T
J
, T
STG
V
AC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10000
- 65 to + 175
1500
Unit
V
V
V
A
A
A
mJ
mJ
KV
V/µs
°C
V
Total device
Per leg
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per leg
Peak repetitive reverse current per leg at t
p
= 2 µs, 1 KHz
Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)
Non-repetitive avalanche energy per leg at 25 °C, I
AS
= 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
Human body model air discharge: C = 100 pF, R 0 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
Document Number 88786
26-Aug-05
www.vishay.com
1
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Electrical Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg
(1)
Test conditions
at I
F
= 10 A, T
C
= 25 °C
at I
F
= 10 A, T
C
= 125 °C
at I
F
= 20 A, T
C
= 25 °C
at I
F
= 20 A, T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
at 4.0 V, 1 MHz
Symbol
V
F
Typ.
0.81
0.65
0.87
0.74
5.0
1.0
250
Max.
0.88
0.75
0.97
0.85
Unit
V
Maximum reverse current per
leg at working peak reverse
voltage
(1)
Typical junction capacitance
I
R
µA
mA
pF
C
J
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance per leg
Notes:
(1) Pulse test: 300
μs
pulse width, 1 % duty cycle
Symbol
R
θJC
MBR
2.0
MBRF
4.0
SB
2.0
Unit
°C/W
www.vishay.com
2
Document Number 88786
26-Aug-05
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
25
10000
MBR, MBRB
20
MBRF
15
1000
T
J
= 175°C
A
v
erage For
w
ard C
u
rrent (A)
I
R
-- Instantaneo
u
s
Re
v
erse C
u
rrent (
µ
A)
100
T
J
= 125°C
T
J
= 75°C
10
1
0.1
10
5
T
J
= 25°C
0
25
50
75
100
125
150
175
0.01
10
20
30
40
50
60
70
80
90
100
Case T
emperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Derating Curve (Total)
Figure 4. Typical Reverse Characteristics Per Leg
350
325
10000
A
v
erage For
w
ard C
u
rrent (A)
300
275
250
225
200
175
150
125
100
75
50
25
0
1
10
100
J
u
nction Capacitance (pF)
1000
100
10
0.1
1
10
100
Number
of Cycles at 60 H
Z
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 5. Typical Junction Capacitance
I
F
-- Instantaneo
u
s For
w
ard C
u
rrent (A)
100
100
T
J
= 175°C
10
T
J
= 125°C
T
J
= 75°C
1
T
J
= 25°C
Transient Thermal Impedance (°C/
W
)
10
MBRF
1
MBR, MBRB
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 1.1
0.1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t -- Pulse Duration (sec.)
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
Figure 6. Typical Transient Thermal Impedance Per Leg
Document Number 88786
26-Aug-05
www.vishay.com
3
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Package outline dimensions in inches (millimeters)
T O -220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
Typ.
TO-262AA
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80) Dia.
0.139 (3.54)
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
K
0.067
(1.70) Typ.
0.331 (8.40)
Typ.
0.634 (16.10)
0.618 (15.70)
1
0.118
(3.00) Typ.
PIN
2
3
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.638 (16.20)
0.598 (15.20)
1
0.370 (9.40)
0.354 (9.00)
PIN
2
0.425 (10.80)
0.393 (10.00)
3
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) Typ.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
0.062 (1.57)
0.054 (1.37)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
Dia.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.108 (2.74)
0.092 (2.34)
0.630 (16.00)
0.614 (15.60)
1
PIN
2
0.264 (6.70)
0.248 (6.50)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
3
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) Typ.
0.058 (1.47) Max.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
www.vishay.com
4
Document Number 88786
26-Aug-05

SB20H200CT-1E3 Related Products

SB20H200CT-1E3 MBRF20H200CTE3 MBR20H200CTE3
Description DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Vishay Vishay Vishay
Parts packaging code TO-262AA TO-220AB TO-220AB
package instruction LEAD FREE, PLASTIC PACKAGE-3 LEAD FREE, PLASTIC, ITO-220AB, 3 PIN LEAD FREE, PLASTIC PACKAGE-3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
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