PDM41257SA20D datasheet, PDF - EEWORLD Datasheet

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PDM41257SA20D: DescriptionStandard SRAM, 256KX1, 20ns, CMOS, CDIP24; Categorystorage storage; File Size318KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41257SA20D Overview

Standard SRAM, 256KX1, 20ns, CMOS, CDIP24

PDM41257SA20D Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	DIP, DIP24,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	20 ns
I/O type	SEPARATE
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	24
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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Description	Standard SRAM, 256KX1, 20ns, CMOS, CDIP24	Standard SRAM, 256KX1, 25ns, CMOS, CDIP24	Standard SRAM, 256KX1, 20ns, CMOS, CDIP24	Standard SRAM, 256KX1, 10ns, CMOS, CDIP24	Standard SRAM, 256KX1, 12ns, CMOS, CDIP24	Standard SRAM, 256KX1, 25ns, CMOS, CDIP24	Standard SRAM, 256KX1, 12ns, CMOS, CDIP24	Standard SRAM, 256KX1, 10ns, CMOS, CDIP24	Standard SRAM, 256KX1, 15ns, CMOS, CDIP24	Standard SRAM, 256KX1, 15ns, CMOS, CDIP24
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	20 ns	25 ns	20 ns	10 ns	12 ns	25 ns	12 ns	10 ns	15 ns	15 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24	R-GDIP-T24
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	24	24	24	24	24	24	24	24	24	24
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.01 A	0.0005 A	0.0005 A	0.01 A	0.01 A	0.01 A	0.0005 A	0.0005 A	0.0005 A	0.01 A
Minimum standby current	4.5 V	2 V	2 V	4.5 V	4.5 V	4.5 V	2 V	2 V	2 V	4.5 V
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.25 V	5.5 V	5.5 V	5.5 V	5.25 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.75 V	4.5 V	4.5 V	4.5 V	4.75 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Paradigm Technology Inc	-	-	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc
package instruction	DIP, DIP24,.3	DIP, DIP24,.3	-	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3
Maximum slew rate	0.16 mA	0.13 mA	0.14 mA	0.19 mA	0.18 mA	0.15 mA	0.16 mA	-	0.15 mA	0.17 mA

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