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Datasheet> All Categories > Discrete semiconductor> The transistor> UPA654TT-E2-A
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UPA654TT-E2-A

Description
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, WSOF, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size150KB，7 Pages
ManufacturerNEC Electronics
Environmental Compliance
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UPA654TT-E2-A Overview

Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, WSOF, 6 PIN

UPA654TT-E2-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.133 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
JESD-609 codee6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

UPA654TT-E2-A Preview

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA654TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
μ
PA654TT is a switching device, which can be driven directly by a
1.8 V power source, and it is suitable for applications such as power switch
of portable equipment and so on.
0.25±0.1
PACKAGE DRAWING (Unit: mm)
2.0±0.2
•
•
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 88 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−1.5
A)
R
DS(on)2
= 133 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−1.5
A)
R
DS(on)3
= 234 mΩ MAX. (V
GS
=
−1.8
V, I
D
=
−1.0
A)
2.1±0.1
FEATURES
6
5
4
1.6
0
~
0.05
1
2
3
0.65
0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.05 S
μ
PA654TT-E1-A
μ
PA654TT-E2-A
6pinWSOF (1620)
1,2,5,6 : Drain
3
: Gate
4
: Source
Remark
“-A”indicates Pb-free (This product does not contain Pb in
external electrode and other parts.). “-E1”, “-E2”indicates the unit
orientation. (8 mm embossed carrier tape, 3000 pcs/reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
0.2
+0.1
−0.05
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
−12
m8.0
m2.5
m10
0.2
1.3
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
EQUIVALENT CIRCUIT
Drain
Drain Current (pulse)
Note2
Total Power Dissipation 1
Total Power Dissipation 2
Channel Temperature
Storage Temperature
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
Note1
P
T2
T
ch
T
stg
2
Notes 1.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
G17765EJ1V0DS00 (1st edition)
Date Published October 2005 NS CP(K)
Printed in Japan
0.4±0.1
Marking: WH
0.1
M
S
Source
0.15
+0.1
−0.05
2005
μ
PA654TT
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
=
−
10 V
V
GS
=
−
4.0 V
I
D
=
−
2.5 A
I
F
= 2.5 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
=
−
12 V, V
GS
= 0 V
V
GS
=
m
8.0 V, V
DS
= 0 V
V
DS
=
−
10 V, I
D
=
−
1.0 mA
V
DS
=
−
10 V, I
D
=
−
1.5 A
V
GS
=
−
4.5 V, I
D
=
−
1.5 A
V
GS
=
−
2.5 V, I
D
=
−
1.5 A
V
GS
=
−
1.8 V, I
D
=
−
1.0 A
V
DS
=
−
10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−
6.0 V, I
D
=
−
1.5 A
V
GS
=
−
4.0 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
UNIT
−
10
m
10
−
0.45
1.0
μ
A
μ
A
V
S
−
0.75
4.7
70
100
140
250
83
40
16
90
173
138
2.7
0.5
0.8
0.87
−
1.5
88
133
234
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS (−)
0
10%
V
GS
90%
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
V
DD
V
DS (−)
90%
90%
10%
10%
V
GS
(−)
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G17765EJ1V0DS
μ
PA654TT
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
Mounted on FR-4 board of
2
5000 mm x 1.1 mm , t
≤
5 sec.
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-100
R
DS(on)
Limited (V
GS
=
−4.5
V)
I
D(pulse)
I
D(DC)
I
D
- Drain Current - A
-10
PW
-1
10
0
10
=
1
m
s
m
s
m
s
-0.1
5 sec
Single Pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
-0.01
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
Single Pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
100
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G17765EJ1V0DS
3
μ
PA654TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 10
Pulsed
V
GS
=
−4.5
V
FORWARD TRANSFER CHARACTERISTICS
- 10
- 1
V
DS
=
−
10 V
P u ls e d
I
D
- Drain Current - A
−3.0
V
-6
−2.5
V
-4
I
D
- Drain Current - A
-8
- 0 .1
- 0 .0 1
- 0 .0 0 1
- 0 .0 0 0 1
- 0 .0 0 0 0 1
T
A
= 1 2 5 °C
7 5 °C
2 5 °C
−
2 5 °C
-2
−1.8
V
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1
0
- 0 .5
- 1
- 1 .5
- 2
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
10
V
DS
=
−10
V
Pulsed
1
V
GS(off)
- Gate Cut-off Voltage - V
- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
-50
0
50
V
DS
=
−10
V
I
D
=
−1.0
mA
T
A
=
−25°C
25°C
75°C
125°C
0.1
100
150
0.01
- 0.01
- 0.1
-1
- 10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
Pulsed
V
GS
=
−1.8
V, I
D
=
−1.0
A
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
100
V
GS
=
−2.5
V, I
D
=
−1.5
A
V
GS
=
−3.0
V, I
D
=
−1.5
A
V
GS
=
−4.5
V, I
D
=
−1.5
A
0
-50
0
50
100
150
100
I
D
=
−1.5
A
50
50
0
0
-2
-4
-6
-8
T
ch
- Channel Temperature - °C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G17765EJ1V0DS
μ
PA654TT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
−4.5
V
Pulsed
150
T
A
= 125°C
75°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
−2.5
V
T
A
= 125°C
Pulsed
75°C
150
100
100
25°C
−25°C
50
25°C
−25°C
50
0
- 0.01
- 0.1
-1
- 10
0
- 0.01
- 0.1
-1
- 10
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
V
GS
=
−1.8
V
Pulsed
T
A
= 125°C
75°C
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d( of f )
100
t
f
t
r
10
t
d( on)
V
DD
=
−
6.0 V
V
GS
=
−
4.0 V
R
G
= 10
Ω
-1
I
D
- Drain Current - A
200
150
100
25°C
−25°C
- 0.1
-1
- 10
50
- 0.01
1
-0.1
-10
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Pulsed
1000
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
100
I
F
- Diode Forward Current - A
1
V
GS
= 0 V
C
oss
C
rss
V
GS
= 0 V
f = 1.0 MHz
-1
-10
-100
0.1
10
-0.1
0.01
0.4
0.6
0.8
1
1.2
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G17765EJ1V0DS
5
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UPA654TT-E2-A Related Products

UPA654TT-E2-A UPA654TT-E1-A
Description Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, WSOF, 6 PIN Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, WSOF, 6 PIN
Is it Rohs certified? conform to conform to
Maker NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Contacts 6 6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (ID) 2.5 A 2.5 A
Maximum drain-source on-resistance 0.133 Ω 0.133 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F6 R-PDSO-F6
JESD-609 code e6 e6
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN BISMUTH TIN BISMUTH
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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