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S29GL512N11TAI012

Description
Flash, 32MX16, 110ns, PDSO56,
Categorystorage    storage   
File Size3MB,108 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Download Datasheet Parametric View All

S29GL512N11TAI012 Overview

Flash, 32MX16, 110ns, PDSO56,

S29GL512N11TAI012 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAMD
Reach Compliance Codeunknown
Maximum access time110 ns
Spare memory width8
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G56
JESD-609 codee0
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Number of departments/size512
Number of terminals56
word count33554432 words
character code32000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size8/16 words
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
ready/busyYES
Department size128K
Maximum standby current0.000005 A
Maximum slew rate0.09 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitYES
typeNOR TYPE
S29GL-N MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
ADVANCE
INFORMATION
Notice to Readers:
The Advance Information status indicates that this
document contains information on one or more products under development
at Spansion LLC. The information is intended to help you evaluate this product.
Do not design in this product without contacting the factory. Spansion LLC
reserves the right to change or discontinue work on this proposed product
without notice.
Publication Number
S29GL-N_00
Revision
A
Amendment
7
Issue Date
February 14, 2005

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