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TIP34C

Description
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3
CategoryDiscrete semiconductor    The transistor   
File Size81KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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TIP34C Overview

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3

TIP34C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

TIP34C Preview

TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
TIP33 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
TIP34
Collector-base voltage (I
E
= 0)
TIP34A
TIP34B
TIP34C
TIP34
Collector-emitter voltage (I
B
= 0)
TIP34A
TIP34B
TIP34C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-80
-100
-120
-140
-40
-60
-80
-100
-5
-10
-15
-3
80
3.5
62.5
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
TIP34
V
(BR)CEO
I
C
= -30 mA
(see Note 5)
V
CE
= -80 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -100 V
V
CE
= -120 V
V
CE
= -140 V
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-0.3 A
-2.5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
- 1A
-3 A
-3 A
-3 A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
40
20
100
-1
-4
-1.6
-3
V
V
I
B
= 0
TIP34A
TIP34B
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
TIP34/34A
TIP34B/34C
MIN
-40
-60
-80
-100
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
mA
mA
mA
V
TYP
MAX
UNIT
I
C
= -10 A
I
C
= -10 A
I
C
= -0.5 A
I
C
= -0.5 A
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.56
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
TEST CONDITIONS
I
C
= -6 A
V
BE(off)
= 4 V
I
B(on)
= -0.6 A
R
L
= 5
MIN
I
B(off)
= 0.6 A
t
p
= 20 µs, dc
2%
TYP
0.4
0.7
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS634AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS634AB
I
C
=
I
C
=
I
C
=
I
C
=
-1·0
-1 A
-3 A
-6 A
-10 A
h
FE
- DC Current Gain
100
10
-0·1
1
-0·01
-0·1
-1·0
-10
-0·01
-0·01
-0·1
-1·0
-10
I
C
- Collector Current - A
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-1·4
TCS634AC
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AA
I
C
- Collector Current - A
-10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
-1·0
-0·1
TIP34
TIP34A
TIP34B
TIP34C
-10
-100
-1000
-0·01
-1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS633AA
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
TIP34, TIP34A, TIP34B, TIP34C
PNP SILICON POWER TRANSISTORS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
1,37
1,17
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5

TIP34C Related Products

TIP34C TIP34
Description Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3 Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3
Is it Rohs certified? incompatible incompatible
Maker Bourns Bourns
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A
Collector-emitter maximum voltage 100 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 20
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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